Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Yusuke Kasahara

Ayako Kawanishi

Hiroki Yonemitsu

Seiji Morita

Hisataka Hayashi

Shinichi Ito

Ryosuke Yamamoto

Hideki Kanai

Hitoshi Kubota

Tsubasa Imamura

Katsutoshi Kobayashi

Kei Kobayashi

Ryuichi Saito

Noriko Sakurai

Masahiro Kanno

A pattern forming method includes: forming a first film on a first region of a processing target film; forming a second film containing metal and carbon and different from the first film, on a second region of the processing target film; etching the first film; and etching the processing target film using the first film after the etching while the second film is exposed.

Pattern forming method and method for manufacturing semiconductor device

In a pattern formation method, a first organic film is formed on a film to be etched and contains a metal. A second organic film is formed on the first organic film, and has a higher density than a density of the first organic film. The first and second organic films are patterned to form a mask, and the film to be etched is etched using the mask.

Pattern formation method and semiconductor device manufacturing method

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film that contains carbon on the first film, and processing the second film into a second pattern. The method further includes impregnating a metal element or a semiconductor element into the second pattern after the processing into the second pattern. The method further includes processing the first film into a first pattern using the second pattern after the impregnation of the metal element or the semiconductor element.

Method of manufacturing semiconductor device

A semiconductor device includes a first pattern comprising first lines at a first interval and second pattern at the first interval. The second lines are between the first lines. A third pattern is above the first and the second patterns in a first and second areas. The third pattern includes third portions spaced from each other at the first interval in the first area and fourth portions spaced from each other at the first interval in the second area. The third portions are directly above the second lines in the first area and the fourth portions are directly above the first lines in the second area. A first contact is between third portions in the first area and connected to a first line of the first pattern. A second contact is between the fourth portions in the second area and connected to a second line of the second pattern.

Semiconductor device

According to one embodiment, a substrate processing apparatus comprises a chamber for a substrate that has a target film thereon. The apparatus includes a first gas introducing unit to introduce a precursor gas into the chamber, a second gas introducing unit that introduces a etching gas for etching the target film into the chamber, and a controller configured to control the first gas introducing unit and the second gas introducing unit to cause the first gas and the second gas to be alternately introduced to the chamber.

Substrate processing apparatus, substrate processing method, and semiconductor device fabrication method

A pattern forming method includes forming a first film on a first layer and a second film on the first film. First and second concave portions are formed in the second film. A third film is formed in the concave portions and a fourth film comprising a polymer is formed on the third film. The fourth film can be processed to phase separate and form a pattern in at least the first opening. The pattern formed in the fourth film can be used in patterning films thereunder. A fifth film can be formed which covers the first concave portion and does not cover the second concave portion. The third film in the second concave portion and the first film under the second concave portion can be processed using the fifth film. The first layer can be patterned using the first, second, or third film as a mask.

Pattern forming method

According to one embodiment, a pattern forming method includes supplying, onto an under layer, a self-organization material including a block copolymer which includes a first polymer and a second polymer, and a third polymer having a molecular structure with oxygen attached to a cyclic structure, wherein the third polymer is bonded to the first polymer, and phase-separating the block copolymer to form a phase-separation pattern on the under layer.

Pattern forming method, self-organization material, and method of manufacturing semiconductor apparatus

A pattern forming method includes forming a guide mask layer including a first feature having a first opening width, a second feature having a second opening width, a third feature having a third opening width. The first width being less than the second width and greater than the third width. A self-organizing material having a phase-separation period is disposed on the guide mask layer to at least partially fill the first, second, and third features. The self-organizing material is process to the cause phase-separation into first and second polymer portions. The first width is greater than the phase-separation period and the third width is less. A masking pattern is formed on the first layer by removing the second polymer portions and leaving the first polymer portions. The masking pattern is then transferred to the first layer.

Lithography pattern forming method using self-organizing block copolymer

According to one embodiment, a pattern forming method includes forming a resist pattern on an under-layer, forming a recessed portion in the under-layer by etching the under-layer using the resist pattern as a mask, slimming the resist pattern, forming a neutral layer having an affinity for first and second polymers on a region of the under-layer not covered with the slimmed resist pattern, forming a block copolymer film containing the first polymer and the second polymer on the slimmed resist pattern and the neutral layer, and forming a microphase separation pattern comprising a first portion formed of the first polymer and a second portion formed of the second polymer by applying microphase separation processing to the block copolymer film.

A semiconductor device manufacturing method includes forming a first film on a substrate having a first region and a second region. A second film is formed on the first film. Guide grooves are formed by removing portions of the second film and exposing the first film. A self-assembly material is coated on the exposed first film and heated to cause a phase separation into a first and a second phase section. The self-assembly material is irradiated. A mask pattern including at least a portion of the first phase section is formed by removing the second phase section. The mask pattern has a first dimension in the first region and a second dimension in the second region that is different from the first dimension. The first film is etched after the mask pattern is formed.

Semiconductor device manufacturing method and pattern forming method

A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

In accordance with an embodiment, a method of forming a pattern includes forming a first layer on a fabrication target film, making a mold and the first layer push each other to form a protrusion on the fabrication target film, and forming first and second regions, forming a block copolymer layer including first and second blocks in the first and second regions, phase-separating the block copolymer layer, forming second and third layers in the first region, and forming fourth and fifth layers in the second region; and removing the third and fifth layers. The first region is surrounded by the first layer and the protrusion. The second region is surrounded by the first layer and contacts the first region via the protrusion. The third layer is surrounded by the second layer. The fifth layer is surrounded by the fourth layer.

Method of forming pattern, manufacturing method of semiconductor device and template

According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide or silicon nitride on the silicon film, forming a physical guide having a depressed portion above the insulating film, forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide, phase-separating the directed self-assembly material layer into a first region which includes the first polymer and a second region which includes the second polymer, removing the second region, processing the insulating film by using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film. Further, the silicon film is processed by using the pattern transferred onto the insulating film as a mask.

Semiconductor device manufacturing method

According to one embodiment, a method for manufacturing a semiconductor device includes forming a film containing boron on a semiconductor substrate, forming a film containing silicon oxide on the film containing boron, patterning the film containing silicon oxide and etching the film containing boron with a gas containing chlorine by using the patterned film containing silicon oxide as a mask.

Method for manufacturing semiconductor device

According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacked on a semiconductor substrate. The etching gas of the etching contains at least two types of group-VII elements and one of a group-III element, a group-IV element, a group-V element, and a group-VI element, the energy of ions entering the semiconductor substrate when performing the etching is not less than 100 eV, and an addition ratio of the group-III element, the group-IV element, the group-V element, the group-VI element, and the group-VII element to the group-VII element is 0.5 (inclusive) to 3.0 (inclusive).

Growing community of inventors

Yokohama Kanagawa, Japan

Yusuke Kasahara