Mitsubishi Electric Corporation

Yusuke Kaji

Satoshi Kondo

Hiroshi Yoshida

Kozo Harada

Hiroyuki Harada

Shinsuke Asada

Daisuke Murata

Seiki Hiramatsu

Taishi Sasaki

Hodaka Rokubuichi

Yuki Yoshioka

Aya Fujita

Hisayuki Taki

The present invention provides a semiconductor device and a power converter having improved moisture resistance reliability. The semiconductor device of the present invention includes: a metal base substrate which includes a first insulating layer provided on a metal base, a support conductor provided on the first insulating layer, and a second insulating layer provided on a side surface of the support conductor; a semiconductor element bonded to the support conductor; a case provided outside the second insulating layer; an external terminal attached to the case; and a sealing member filled in a region surrounded by the support conductor, the second insulating layer and the case.

Semiconductor device and power converter

According to an aspect of the first disclosure, a semiconductor device includes a base plate, a case that surrounds a region immediately above the base plate, a semiconductor chip provided in the region, a sealing resin that fills the region and a barrier layer provided on the sealing resin, wherein the barrier layer has a first surface facing the base plate, a second surface opposite to the first surface, and a convex part protruding upward from the second surface, the first surface has a longer distance to the base plate as getting farther from the center, the convex part is provided avoiding the center, and a height of the convex part is greater than a distance in a thickness direction of the barrier layer between a portion of the first surface immediately below the convex part and a portion of the first surface provided at the center.

An object of the present invention is to suppress a crack in a sealing resin and a warpage in a semiconductor device in a power semiconductor device. A power semiconductor device includes: a semiconductor element; a terminal; a chassis; and a sealing resin sealing the semiconductor element and the terminal in the chassis. The sealing resin includes: a first sealing resin covering at least the semiconductor element; and a second sealing resin formed on an upper portion of the first sealing resin, and in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal.

Power semiconductor device with first and second sealing resins of different coefficient of thermal expansion

A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.

Power semiconductor module and power conversion apparatus

A semiconductor device includes an insulating substrate, a semiconductor element, a conductor substrate, and a case member. The semiconductor element is connected above the insulating substrate, and the conductor substrate is connected above the semiconductor element. The case member surrounds a region overlapping with the insulating substrate, the semiconductor element, and the conductor substrate in plan view to avoid the region. A plurality of metal patterns are arranged on a main surface of an insulating layer. A groove is formed between a pair of adjacent metal patterns of the plurality of metal patterns. A through hole is formed in the conductor substrate at a position overlapping with the groove in plan view.

Semiconductor device and method for manufacturing the same, and power conversion device

A power semiconductor device includes a casing, a first insulating circuit board, a second insulating circuit board, and a sealing material. The first insulating circuit board is disposed to be surrounded by the casing. The second insulating circuit board is surrounded by the casing and spaced from the first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board. The sealing material fills a region surrounded by the casing. The first or second insulating circuit board is provided with a hole extending from one main surface to the other main surface opposite to one main surface. From at least a portion of an inner wall surface of the casing a protrusion extending to a region overlapping the first or second insulating circuit board in a plan view extends toward the region surrounded by the casing.

Power semiconductor device and method of manufacturing the same, and power conversion device

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

Semiconductor device

The object of the present invention is to provide a semiconductor device capable of reducing the influence of gas generated from a resin to which a fire retardant is not added, and a power conversion device including the semiconductor device. The semiconductor device according to the present invention includes: a semiconductor element disposed on an insulating substrate; a case disposed around an outer edge of the insulating substrate, the case including an opening facing the semiconductor element; a sealing resin sealing the semiconductor element in the case; and a lid closing the opening of the case, wherein the sealing resin does not contain a fire retardant, the lid contains the fire retardant, and a space is provided between the sealing resin and the lid.

Growing community of inventors

Tokyo, Japan

Yusuke Kaji