Mitsubishi Electric Corporation

Yusuke Ishiyama

Junji Fujino

Yuji Imoto

Shinsuke Asada

Naoki Yoshimatsu

Shohei Ogawa

Takumi Shigemoto

Hiroshi Yoshida

Satoshi Kondo

Mitsugu Tanaka

Mikio Ishihara

Satoru Ishikawa

Taketoshi Shikano

Hidetoshi Ishibashi

Hodaka Rokubuichi

Isao Oshima

Akitoshi Shirao

Nobuhiro Asaji

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device

A semiconductor module includes: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed wiring board arranged above the insulated circuit board and the semiconductor device and having a through-hole; a metal pile having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion penetrating through the through-hole and bonded to the printed wiring board; a case surrounding the insulated circuit board, the semiconductor device, the printed wiring board and the metal pile; and a sealing material sealing an inside of the case.

Semiconductor module

A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.

Semiconductor device and method for producing semiconductor device

A semiconductor module includes: a first insulating plate; a second insulating plate is arranged above the first insulating plate; a first semiconductor device provided on an upper surface of the first insulating plate; a second semiconductor device provided on a lower surface of the second insulating plate; an insulating substrate including a third insulating plate arranged between the first insulating plate and the second insulating plate, and a conductor provided on the third insulating plate and connected to the first and second semiconductor devices; and sealing resin sealing the first and second semiconductor devices and the insulating substrate, wherein a withstand voltage of the third insulating plate is lower than withstand voltages of the first and second insulating plates.

A semiconductor device according to the present invention includes the following: a conductive layer disposed on an insulating substrate; a first semiconductor element and a second semiconductor element that are joined on an opposite surface of the conductive layer opposite from the insulating substrate, with a gap the first semiconductor element and the second semiconductor element; an electrode joined on an opposite surface of the first semiconductor element opposite from the conductive layer, and an opposite surface of the second semiconductor element opposite from the conductive layer, so as to extend over the gap; and resin sealing the conductive layer, the first semiconductor element, the second semiconductor element, and the electrode. The conductive layer has a recess pattern that is disposed on a surface being opposite from the insulating substrate and facing the gap, the recess pattern extending along the gap.

Semiconductor device and power converter

A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.

Semiconductor device with a plate-shaped lead terminal

Provided is a semiconductor device having a small footprint, where the semiconductor device includes multiple power modules and a cooling structure for these power modules. The semiconductor device includes: a first power module on a first top plate of a coolant jacket; and a second power module on a second top plate of the coolant jacket, where the second top plate face the first top plate. The coolant jacket includes a first fin in contact with the first top plate in a passage, and a second fin in contact with the second top plate in the passage. The power modules face each other through the top plates and the fins.

Semiconductor device having multiple power modules and cooling mechanism for the power modules

A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.

Power semiconductor device

A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.

Growing community of inventors

Tokyo, Japan

Yusuke Ishiyama