Fuji Xerox Co., Ltd.

Sony Semiconductor Solutions Corporation

Sony Corporation

Mitsubishi Heavy Industries Limited

Mitsubishi Electric Corporation

Sony Group Corporation

Agc Inc.

Square Enix Co., Ltd.

Fuji Xerox Corporation

Resonac Corporation

Yusuke Ikeda

Yukiaki Nakamura

Yosuke Ueno

Masanobu Ninomiya

Akira Matsumoto

Yasuo Kadokura

Katsumi Daimon

Shizunori Matsumoto

Noriyuki Mizutani

Satoshi Kamiwaki

Rei Yoshikawa

Shinichirou Etou

Atsushi Sugawara

Yuji Kondo

Takahiro Inagaki

Toshiyuki Funato

Satoshi Yoshida

Shuji Sato

Susumu Yoshino

Yosuke Tsurumi

Hiroshi Nakazawa

Tsutomu Haruta

Takashi Imai

Yasuo Matsumura

Masaru Takahashi

Noam Eshel

Moegi Iguchi

Atsushi Suzuki

Hiroyuki Tanaka

Takeshi Sato

Atsumi Niwa

Koji Sasaki

Shun Kaizu

Keisuke Kato

Yosuke Ikeda

Mikio Nakamura

Akihito Suzuki

Kiyoshi Makigawa

Tsugumaru Yamashita

Shigeru Hayashi

Kunihiro Kuroi

Tatsuki Nishino

Golan Zeituni

Shinpei Takagi

Kiyohiro Yamanaka

Kazufumi Tomita

Eiji Hirata

Yusuke Moriyama

Daijiro Anai

Hideo Maehata

Tsutomu Imoto

Norio Shoji

Masahiro Segami

Takashi Moue

Takuya Maruyama

Kenichi Takamiya

Soichiro Kitagawa

Hiroshi Yuasa

Katsuyoshi Takahashi

Kazunori Yamamoto

Takuya Kagawa

Tomohiro Hasegawa

Tomoaki Kitagawa

Kazutoshi Tomita

Sachio Akebono

Hideki Shoyama

Hiroshige Ito

Kenichiro Shimo

Yasutaka Kimura

Youhei Oosako

Takahiro Akahane

Yasufumi Hino

Tomoya Watanabe

Hiromi Osaka

Eiji Nakai

Naoto Nagaki

Mika Yokoyama

Takanori Matsushima

Yosuke Tsurmi

Takayuki Miyauchi

Hidenori Takai

Masanobu Ogawa

Takeshi Oyakawa

Ren Hiyoshi

Yoshimasa Sakamoto

Yuuichi Udou

Oichi Kumagai

Takayuki Yoneda

Katzutoshi Tomita

Suzuki Akihito

Nakamura Mikio

Funato Toshiyuki

Ikeda Yosuke

Kondo Yuji

Inagaki Takahiro

Kuroi Kunihiro

Yamashita Tsugumaru

A vehicular laminated glass includes a first glass plate having a first main surface and a second main surface, a second glass plate having a third main surface and a fourth main surface, an adhesive interlayer disposed between the second main surface and the third main surface, a light source which faces the fourth main surface and emits light toward the fourth main surface, and an optical element which is disposed between the fourth main surface and the light source and refracts light emitted from the light source into the fourth main surface.

Vehicular laminated glass having a light source and an optical element for introducing light into the glass

The range-finding apparatus includes a light source, an optical receiver, a setting unit, a detector, and a calculation unit. The light source projects light with a first irradiation pattern in a first period and projects light with a second irradiation pattern in a second period. The optical receiver receives light to output a pixel signal. The setting unit sets a reference signal based on the pixel signal in the first period. The detector detects whether or not the pixel signal varies from the reference signal by a first value or more in the second period and outputs a first detection signal indicative of a result obtained by the detection. The calculation unit calculates a distance to a to-be-measured object using the first detection signal.

Range-finding apparatus and range-finding method

Event detection devices are disclosed. in one example, an event detection device includes a photodiode that generates a photoelectric conversion current, a conversion transistor that converts the photoelectric conversion current into a voltage and outputs the voltage from a gate, an amplification transistor that amplifies a voltage between a gate having a potential according to the photoelectric conversion current and a source having a reference potential and outputs the voltage from a drain, a potential supply unit that supplies a predetermined potential lower than the reference potential to an anode of the photodiode, a back gate of the conversion transistor, and a back gate of the amplification transistor, and a potential controller that controls the predetermined potential based on a temperature affectable to a threshold voltage of at least one of the conversion transistor or the amplification transistor.

Event detection device

Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels () that each outputs a luminance change of incident light; and a detection circuit () that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element () that generates a charge according to an incident light amount; a logarithmic conversion circuit () that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor () having a drain connected to a sense node of the logarithmic conversion circuit.

Solid-state imaging device with transistor drain connected to sense node of logarithmic conversion circuit

A photodetection device according to the present disclosure includes: a first pixel that is configured to generate a first pixel signal; a reference signal generator that is configured to generate a reference signal; and a first comparator including a first power supply circuit and a first comparison circuit, the first power supply circuit configured to generate a first power supply voltage on the basis of a power supply voltage supplied from a first power supply node and a bias voltage and configured to output the first power supply voltage from an output terminal, and the first comparison circuit configured to operate on the basis of the first power supply voltage and configured to perform a comparison operation on the basis of the first pixel signal and the reference signal.

Photodetection device and electronic apparatus

Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes a conversion circuit connected to a vertical signal line of a pixel array, a voltage generation circuit that outputs a predetermined voltage, and a reference voltage generation circuit that receives the predetermined voltage and outputs a reference voltage. The reference voltage generation circuit includes an operational amplifier that amplifies the predetermined voltage and outputs the reference voltage, a capacitive element having one end connected to an input of the operational amplifier that is different from an input that receives the predetermined voltage, a first switching circuit that connects the other end of the capacitive element to either the predetermined voltage output from the voltage generation circuit or a feedback loop of the operational amplifier, and a second switching circuit that selectively connects the one end of the capacitive element to the feedback loop of the operational amplifier.

Solid-state imaging device and electronic apparatus

A game is provided in which playing characters controlled by players battle each other in a three dimensional virtual space so as to obtain battle points. The obtained battle points are collected as total values, with the total values being ranked. A player belongs to one group of a plurality of groups set in the game program. The playing characters are divided into specific teams based on input from each player, with each specific team being in the group to which the player belongs. The teams, including two or more playing characters comprising the team, of different groups battle in the three dimensional virtual space. The battle points obtained by the respective playing characters in the battle are totalized for every team, and the teams are ranked based on the team points.

Team playing type game program

It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.

Solid-state image sensor and imaging device

An imaging element according to a first aspect includes: a successive approximation resistor type analog-digital converter that converts an analog signal output from a pixel including a photoelectric conversion part into a digital signal, in which the successive approximation resistor type analog-digital converter has a preamplifier having a band limiting function. An imaging element according to a second aspect includes a DAC in which the successive approximation resistor type analog-digital converter uses a capacitance element to convert a digital value after AD conversion to an analog value, and sets the analog value to a comparison reference for comparison with an analog input voltage. Then, the DAC includes one of lower-bit capacitance elements including a plurality of capacitance elements, and after performing AD conversion for all bits, each of the plurality of capacitance elements is selectively applied with at least a first reference voltage to a fourth reference voltage, so that re-AD conversion is performed for lower bits.

Imaging element and electronic device

Changing the analog gain for each of columns while suppressing an expansion of area and an increase in power consumption. A solid-state imaging apparatus (A) according to an embodiment includes: converters (A toD) connected to a vertical signal line (VSL) extending from a pixel array unit (); a voltage generator () that is connected to a plurality of voltage lines and outputs reference voltages having mutually different voltage values individually to the plurality of voltage lines; wiring lines (Lto L, Lto L) connecting the converter and the plurality of voltage lines; and switches (SWto SW) provided on the wiring line and configured to perform changeover of the voltage lines connected to the converter to one of the plurality of voltage lines.

Solid-state imaging apparatus and electronic apparatus

An image sensor including a pixel array section in which a plurality of pixels including photoelectric conversion units is disposed, and a comparator that compares an analog pixel signal output from the pixels to a predetermined reference signal, and outputs a comparison result according to a signal level of the pixel signal. The comparator includes differential pair transistors, a first load transistor connected in series with a first transistor of the differential pair, and a second load transistor connected in series with a second transistor of the differential pair. The first transistor of the differential pair accepts a signal obtained by combining the pixel signal and the predetermined reference signal as a gate input, the second transistor of the differential pair accepts a predetermined voltage as a gate input. In addition, a capacitance unit is connected between a common connection node of the first transistor of the differential pair and the first load transistor, and a node of the predetermined voltage.

Image sensor and electronic device

An A/D converter and electronic equipment are disclosed. In one example, an A/D converter includes a comparator circuit and a first transistor. The comparator circuit compares a threshold voltage (V) to a pixel signal (S). The first transistor has a control terminal and forms a clamp circuit, and receives an input of a result of the comparison. When the clamp circuit is turned on (closed), the first transistor equalizes currents flowing to a first predetermined position and a second predetermined position or equalizes voltages at the first predetermined position and the second predetermined position, the first predetermined position and the second predetermined position being connected to each other at the time of clamping. This makes it possible to suppress occurrence of streaking in a case where an excessive input is applied to a pixel signal line side.

A/D converter and electronic equipment

There is provided an imaging device that includes a pixel, the pixel comprising: a photodetector; a control transistor; a capacitor coupled to the photodetector; a reset transistor coupled between the control transistor and the capacitor; an amplifier transistor having a gate terminal coupled to the capacitor; and a select transistor coupled to the amplifier transistor; a first signal line coupled to the select transistor; and a first amplifying circuit including a first input terminal coupled to the first signal line and a second input terminal configured to receive a first reference signal and an output terminal coupled to the control transistor.

Image sensor and imaging apparatus

An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Imaging element and imaging apparatus

Growing community of inventors

Tokyo, Japan

Yusuke Ikeda