Agc Inc.

Asahi Glass Company, Limited

Yusuke Hirabayashi

Yuzo Okamura

Nobuhiko Ikenoya

Naohiro Umeo

A method of manufacturing a gallium oxide substrate includes polishing the gallium oxide substrate with a polishing slurry, wherein the polishing slurry contains manganese dioxide particles and water.

Method of manufacturing gallium oxide substrate and polishing slurry for gallium oxide substrate

In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PPof the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.

Substrate for use as mask blank, and mask blank

A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

Glass substrate for mask blank, and method for producing the same

A mask blank includes a glass substrate including a first main surface and a second main surface, an absorbing film formed above the first main surface, and a conductive film formed on the second main surface. A reflective film is provided between the absorbing film and the glass substrate. In a surface of the conductive film on an opposite side to the glass substrate, when a surface shape of a square central area having a length of 142 mm and a width of 142 mm excluding a four-sided frame-shaped peripheral area thereof is expressed by the specific formula, flatness of a component obtained by summing all aP(x)P(y) with the sum of k and l being 3 or more and 25 or less is 20 nm or less.

Mask blank

A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by  A flatness of a sum of compositing all of aP(x)P(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30.

Glass substrate for mask blank, mask blank, photomask, and method for manufacturing glass substrate for mask blank

A glass substrate for a mask blank includes a rectangular-shaped main surface on which a film having a circuit pattern is to be formed. The main surface includes a quadrangular peripheral frame and a square-shaped center area defined by excluding the frame. The center area has a longitudinal length of 142 mm and a lateral length of 142 mm. A surface morphology of the center area is expressed by the following formulas. A flatness of a sum of compositing all of aP(x)P(y) is less than or equal to 20 nm when a sum of k and l is greater than or equal to 3 and less than or equal to 9. The flatness is less than or equal to 20 nm when a sum of k and l is greater than or equal to 10 and less than or equal to 30. 

A glass substrate for a mask blank has a rectangular planar shape. In four square regions each positioned at each corner of a first region (quality assurance region) and having one side of 8 mm, an angle between a least square plane in each the square region and that in the first region is 3.0 &#x3bc;ad or less, and a PV value relative to the least square plane is 30 nm or less. In four strip regions each positioned in an area between one side of the first region and 8 mm inside the side and excluding the square regions, an angle between a least square plane in each the strip region and that in the first region is 1.5 &#x3bc;ad or less, and a PV value relative to the least square plane is 15 nm or less.

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Tokyo, Japan

Yusuke Hirabayashi