Oki Electric Industry Co., Ltd.

Chugai Seiyaku Kabushiki Kaisha

Oki Semiconductor Co., Ltd.

Electric Industry Co., Ltd.

Yusuke Harada

Minoru Shindo

Isao Matsunaga

Nobuhiro Oi

Haruki Ogawa

Hiroshi Okazaki

Takao Noto

Teizo Shinozaki

Bunya Aoki

Takao Kimura

Hisao Endo

Kanji Moro

Toshiyuki Nebashi

Tomoyuki Morita

Hiroshi Onoda

Kazuhide Abe

Yasuhiro Fukuda

Makiko Nakamura

Yasuyuki Tatara

Hiroyuki Tanaka

Toru Yoshie

Tadashi Narita

Toshio Kuroki

Masahiko Matsumoto

Kana Kojima

A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.

Semiconductor device having damascene interconnection structure that prevents void formation between interconnections having transparent dielectric substrate

A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.

Semiconductor device having damascene interconnection structure that prevents void formation between interconnections

A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the fist conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

Semiconductor device

A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

A conductive layer which is formed on an insulative layer on a semiconductor substrate is connected to the semiconductor substrate via a through portion which passes through the insulative layer and reaches the semiconductor substrate. In a state where the conductive layer is electrically connected to the semiconductor substrate via the through portion, a patterning process using a plasma etching is performed on the conductive layer, thereby forming a conductive path. After the formation of the conductive path, a heating process is performed on the substrate or the conductive path in order to disconnect the electrical connection between the through portion and the substrate by a reaction between the through portion and the semiconductor substrate which is in contact therewith.

Method of manufacturing semiconductor device

A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole.

Method of forming a patterned tungsten damascene interconnect

Before deposition of a CVD titanium film on a cobalt silicide layer, an element which reacts with titanium is provided in the cobalt silicide layer in advance. Thereafter, the CVD titanium film is deposited on the cobalt silicide using a titanium tetrachloride gas.

Method of forming CVD titanium film

A method of manufacturing a semiconductor device, according to the present invention comprises a step for forming an insulating film over a semiconductor wafer and thereafter subjecting the same to photolithography and etching to thereby define a contact hole, a step for forming an adhesive layer over the insulating film with the contact hole defined therein, a step for placing the interior of a processing chamber under an atmosphere uncontaining oxygen and subjecting the adhesive layer to heat treatment, a step for setting the temperature of the semiconductor wafer to less than or equal to a temperature equivalent to energy of such an extent as to cut the bonding between atoms which form the adhesive layer and thereafter taking the semiconductor wafer out of the processing chamber, and a step for forming an embedding film to be embedded in the contact hole.

Method of manufacturing a semiconductor device

A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is-formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.

Semiconductor device having multi-layered metalization and method of manufacturing the same

In order to provide an Al/Ti layered interconnection which comprises a Ti (titanium) layer and an Al layer composed of Al (aluminum) or an Al alloy both formed over a base in this order and is capable of retarding a reaction between Ti and Al and preventing pinholes from occurring, the present invention is characterized as follows: The Al layer contains Si (silicon) in a portion adjacent to the Ti layer in a concentration capable of retarding an interface reaction between Ti and Al. Further, the concentration of Si in an Al layer portion on the side above the adjacent portion is set to a concentration lower than a concentration for allowing the upper Al layer portion to produce pinholes even at the maximum.

Al/Ti layered interconnection and method of forming same

A semiconductor having multi-layer metalization which has a metal layer between aluminum alloy and metal nitride layers, that prevents failure of interconnects when electromigration causes a discontinuity in the aluminum alloy layer. In a one embodiment, the metal of the metal layer and the metal of the nitride layer are both the same metal, such as titanium. In a method of manufacturing the semiconductor device, an insulating layer is formed on a surface of a semiconductor substrate, and in vacuum chambers, the alloy layer is formed on the insulating layer, a metal layer is formed on the alloy layer, and a metal nitride layer is formed on the metal layer in an nitrogen atmosphere. Sputtering, such as DC magnetron sputtering, RF-bias sputtering, or thermal evaporation deposition, may be used to apply the respective nitride, metal and alloy layers. If the same metal is used for the metal layer and the nitride layer, the same vacuum chamber may be used to apply both layers, by replacing an inert gas atmosphere used during metal layer deposition by a nitrogen gas atmosphere for use during the nitride layer deposition.

Semiconductor device having a multi-layered conductive structure which

A method of manufacturing a semiconductor device comprises the steps of preparing a semiconductor substrate, forming a field oxide layer for isolation between active areas, forming a diffusion layer in a surface of the semiconductor substrate, depositing a first insulating interlayer on the semiconductor substrate, forming a W-polycide layer including As on the first insulating interlayer selectively, depositing a second insulating interlayer on the first insulating interlayer and on the W-polycide layer, forming a first contact hole with a shallow depth on the W-polycide layer and a second contact hole with a deep depth on the diffusion layer, depositing a W layer in only the second contact hole by selective CVD so as not to form a step with the second insulating interlayer and, contacting the W-layer and the polycide layer by forming a wiring layer on the surface of the second insulating layer.

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Tokyo, Japan

Yusuke Harada