Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Samsung Electronics Co., Ltd.

Yusuke Hama

Shigemasa Nakasugi

Hiroshi Yanagita

Takashi Sekito

Yuriko Matsuura

Masato Suzuki

Georg Pawlowski

Xiaowei Wang

Tetsuo Okayasu

Hyun-woo Kim

Go Noya

Shunji Kawato

Cheol Hong Park

Kazunori Kurosawa

Takayuki Sao

Taku Hirayama

[Problem to be Solved] An object is to provide a compound with good heat resistance. And another object is to provide a coating made exhibits less film shrinkage, good gap filling property and good planarization. [Solution] The present invention provides an ethynyl derived composite and a composition comprising thereof. And the present invention provides a method for manufacturing a coating by it, and a method for manufacturing a device.

Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating

An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.

Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same

The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same

[Problem] To provide a composition for an underlayer, which can form an underlayer having flattened surface. [Means for Solution] A composition for forming an underlayer, comprising a polymer having a repeating unit containing nitrogen and a solvent. An underlayer is formed by coating this composition on a substrate, preferably baking in an inert atmosphere, and then baking in the air containing oxygen.

Composition for forming underlayer and method for forming underlayer therewith

[Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.

Top-layer membrane formation composition and method for forming resist pattern using same

Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.

Composition for forming topcoat layer and resist pattern formation method employing the same

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Kakegawa, Japan

Yusuke Hama