Canon Kabushiki Kaisha

Canon Anelva Corporation

Yusuke Fukuchi

Naomu Kitano

Nobumasa Suzuki

Hideo Kitagawa

A light emitting device in which pixels are arranged is provided. Each of the pixels includes an organic layer including a light emitting layer, a reflective layer arranged between the main surface and the organic layer, a first insulator arranged between the reflective layer and the organic layer, a transmission electrode arranged between the first insulator and the organic layer, and a second insulator arranged so as to cover a peripheral edge portion of the transmission electrode while including an opening portion that exposes a part of the transmission electrode. A groove extending through the first insulator is provided between the peripheral edge portion of the transmission electrode and the reflective layer, the transmission electrode is electrically connected to the reflective layer in the groove, and the second insulator includes a recess portion in a portion covering the groove.

Light emitting device, manufacturing method of light emitting device, display device, photoelectric conversion device, electronic apparatus, illumination device, moving body, and wearable device

A light emitting device in which light emitting elements are arranged on a surface of a substrate is provided. Each of the light emitting elements comprises a light emitting layer, a reflective layer arranged between the light emitting layer and the surface, a first electrode arranged between the reflective layer and the light emitting layer, an optical distance adjustment layer arranged between the reflective layer and the first electrode, an insulating layer covering a peripheral portion of the first electrode and arranged, between two light emitting elements adjacent to each other, between the optical distance adjustment layer and the light emitting layer, and a conductive plug extending from the insulating layer to pass through the optical distance adjustment layer and reach a height of an upper surface of the reflective layer while being in electrical contact with the first electrode.

Light emitting device, image forming device, photoelectric conversion device, electronic apparatus, illumination device, moving body, and method of manufacturing light emitting device

Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.

Photo-detection device, photo-detection system, and mobile apparatus

A photo-detection device includes an APD, a current detecting unit to which a signal via a first terminal of the APD is input, a load element connected to a node between the APD and the current detecting unit, a quench signal generating unit to which a signal from the current detecting unit is input and which outputs a quench signal, and a switch connected to a second terminal of the APD and a first wiring line to which first potential is supplied. The node is connected via the load element to a second wiring line to which second potential different from the first potential is supplied, and the quench signal generating unit generates a one-shot pulse signal as the quench signal based on the signal from the current detecting unit and causes the quench signal to be input to the switch.

Photo-detection device, imaging apparatus, and imaging system

A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.

Method for forming dielectric films

A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

Growing community of inventors

Yokohama, Japan

Yusuke Fukuchi