Shin-etsu Chemical Co., Ltd.

Yusuke Biyajima

Tsutomu Ogihara

Daisuke Kori

Takeru Watanabe

Masahiro Kanayama

Takayoshi Nakahara

Tsukasa Watanabe

Takeshi Kinsho

Toshihiko Fujii

Motoaki Iwabuchi

Seiichiro Tachibana

Yuji Harada

Kazumi Noda

Rie Kikuchi

Ryo Mitsui

Jun Hatakeyama

Masaki Ohashi

Yoshio Kawai

Tomohiro Kobayashi

Yoshinori Taneda

Taku Morisawa

Naoki Kobayashi

Yusuke Kai

Yukio Hoshi

Mamoru Watabe

Tsutomo Ogihara

A material for forming an adhesive film used for an adhesive film formed directly under a resist upper layer film, contains: (A) a resin having at least one structural unit containing a fluorine-substituted organic sulfonyl anion structure and having at least one structural unit shown by the following general formula (2) besides the structural unit containing the fluorine-substituted organic sulfonyl anion structure; (B) a thermal acid generator; and (C) an organic solvent. The material forms an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and also makes it possible to form an excellent pattern profile. A patterning process uses the material. A method forms the adhesive film.

Material for forming adhesive film, patterning process, and method for forming adhesive film

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where Rrepresents an iodine-containing organic group; and Rand Rare each independently identical to R, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

A material for forming an organic film containing a compound of general formula (1) in which X is an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 is an integer of 2 to 10, Ris at least one of formulae (2) to (4), where l1 is 0 or 1, and l2 is 0 or 1, and an organic solvent; an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Material for forming organic film, method for forming organic film, patterning process, and compound

A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where Rrepresents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; Rand Rare each independently the same as Ror each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; Rrepresents a divalent organic group substituted with a fluorine atom; Rand Reach independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; Rrepresents a divalent hydrocarbon group having 1 to 20 carbon atoms; and Lrepresents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.

Composition for forming silicon-containing resist underlayer film and patterning process

A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of 'n' having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70≤a≤0.99 and 0.01≤b≤0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH)—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH)—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

Resist underlayer film material, patterning process, and method for forming resist underlayer film

A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an 'm' number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH)—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; Rrepresents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Arrepresents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. Rrepresents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Zrepresents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.

The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of 'n' having 2 to 50 carbon atoms or an oxygen atom, 'n' represents an integer of 1 to 10, and Rindependently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Qrepresents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, Xrepresents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, Rrepresents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent, where X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 1 to 10, and Rrepresents at least one or more of the following general formulae (2) to (4). This aims to provide an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

Method for measuring distance of diffusion of curing catalyst

The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where Rrepresents divalent organic group substituted with one or more fluorine atoms; Rand Reach independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; Rrepresents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; Rand R, or Rand R, are optionally bonded to each other to form a ring with sulfur atom in the formula; and Lrepresents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.

The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass. 

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Jyoetsu, Japan

Yusuke Biyajima