Mitsubishi Electric Corporation

Yusuke Azuma

Koichi Akiyama

Eitaro Ishimura

Takeshi Yamatoya

Kimitaka Shibata

Yoshimichi Morita

Asami Uchiyama

An optical semiconductor device includes: a resonator end face; an optical waveguide; a window structure located between the resonator end face and the optical waveguide; and a vernier on the window structure and allowing measurement of length of the window structure along an optical axis direction.

Optical semiconductor device, method for manufacturing optical semiconductor device, and method for manufacturing optical module

A semiconductor optical element and an optical module in which extinction ratio variation among integrated optical modulation elements is reduced. An optical module has a wavelength multiplexer that multiplexes light respectively emerging from electric-field-absorption modulator (EAM) portions of integrated optical modulation elements, and that outputs the multiplexed light. The integrated optical modulation element has a signal input terminal, a laser element portion, and an EAM portion. Each of the integrated optical modulation elements has a difference between an oscillation wavelength and a barrier layer bandgap wavelength, represented as an LDBG wavelength difference. Variation of the LDBG wavelength differences is limited within a range of &#xb1;1 nm.

Semiconductor optical element, optical module and method of manufacturing semiconductor optical element

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Tokyo, Japan

Yusuke Azuma