Analog Devices Global

Analog Devices International Unlimited Company

Analog Devices Global Unlimited Company

Yusuf Atesal

Turusan Kolcuoglu

Abdullah Celik

Bilal Tarik Cavus

Huseyin Kayahan

Peter John Katzin

Alp Oguz

Santosh Anil Kudtarkar

Berktug Ustundag

Bilge Bayrakci

Winslow Round

A package is disclosed. The package includes a carrier that comprises a first conductive layer on a first side and a second conductive layer on a second side opposite the first side. The first conductive layer comprises wire bonding pads. The package also includes a semiconductor die that is flip chip mounted on the first side of the carrier.

Semiconductor packages

System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.

High-linearity radio frequency (RF) switches and amplifiers

High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of terminals including an antenna terminal, a receive terminal, and a transmit terminal. The RF switch also includes a plurality of transistors that are controllable to set the RF switch in a first mode or a second mode, and an inductor electrically connected between the antenna terminal and the receive terminal.

High power radio frequency switches with low leakage current and low insertion loss

High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.

Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.

Biasing of radio frequency switches for fast switching

A high isolation wideband switch is disclosed. In one aspect, the switch includes an integrated circuit package having an integrated circuit die with a first plurality of leads that is positioned on a package substrate that has a second plurality of leads. The first leads of the integrated circuit die are connected to the second the leads of the package substrate via bond wires and a first electrical coupling occurs between the first leads and the integrated circuit die in response to an RF signal applied to the integrated circuit package. The bond wires have a second electrical coupling in response to the RF signal and the bond wires are arranged such that the second electrical coupling is matched to the first electrical coupling within a selected frequency band so as to reduce the overall electrical coupling of the integrated circuit package for RF signals within the selected frequency band.

High isolation wideband switch

A control circuit is provided for controlling the voltage at the gate terminal of a field effect transistor acting as a switch. The voltage, at for example, the source terminal of the transistor can be provided to a low pass filter and is then voltage translated to provide the gate signal. The filtering can be arranged so as to compensate for the effect of parasitic capacitances within the transistor, thereby linearizing its frequency response. The voltage translation can help to limit voltage differences between the gate and channel of the transistor. This can be significant as relatively fast transistors, as might be used in microwave circuits, may fail with relatively modest voltages at their gates.

Method of and apparatus for biasing switches

Apparatus and methods for reducing glitches in digital step attenuators are disclosed. By configuring a multi-bit DSA such that an attenuation control block changes a plurality of control signals in a manner sequencing individual switches of the DSA, glitches can be reduced and RF signal behavior can be enhanced. The sequence, based upon a unit time delay, causes the transient attenuation value to be bounded between a minimum and maximum and can improve settling time.

Apparatus and methods for reducing glitches in digital step attenuators

Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.

Apparatus and methods for biasing radio frequency switches

Aspects of this disclosure relate to a termination circuit configured to mitigate crosstalk from a radio frequency (RF) input/output (I/O) path to a second I/O path, such as a digital I/O path. Such crosstalk can be due to coupling between adjacent bond wires, for example. The termination circuit can include a low impedance loss path, such as a series RC shunt circuit. According to certain embodiments, an electrostatic discharge (ESD) protection circuit can be in parallel with the termination circuit.

Growing community of inventors

Istanbul, Turkey

Yusuf Atesal