Sharp Kabushiki Kaisha Corporation

Yushi Inoue

Kazuya Ishihara

Shinobu Yamazaki

Takashi Nakano

Nobuyoshi Awaya

Atsushi Ogawa

Nobuaki Teraguchi

Yukio Tamai

Yasunari Hosoi

Koichiro Fujita

Takao Kinoshita

Tsukasa Doi

Tetsuya Ohnishi

Nobuyuki Ito

Yoshimi Tanimoto

Takanori Sonoda

Junya Onishi

Kazumasa Mitsumune

Takahiro Shibiuya

Kenichiroh Abe

Yoshihiro Ooishi

A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride semiconductor layer and a second nitride semiconductor layer having a different composition from that of the first nitride semiconductor layer, and generates two dimensional electron gas on a hetero interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and an insulating film which covers at least a portion of a surface of the nitride semiconductor multilayer structure, has a concentration of Si&#x2014;H bonds equal to or less than 6.0&#xd7;10cm, and is formed of silicon nitride.

Nitride semiconductor device

According to this GaN-based HFET, resistivity &#x3c1; of a semi-insulating film forming a gate insulating film is 3.9&#xd7;10&#x3a9;cm. The value of this resistivity &#x3c1; is a value derived when the current density is 6.25&#xd7;10(A/cm). By inclusion of the gate insulating film by a semi-insulating film having a resistivity &#x3c1;=3.9&#xd7;10&#x3a9;cm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1 &#xd7;10&#x3a9;cm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1 &#xd7;10&#x3a9;cm.

Nitride semiconductor

A variable resistance element that can stably perform a switching operation with a property variation being reduced by suppressing a sharp current that accompanies completion of forming process, and a non-volatile semiconductor memory device including the variable resistance element are realized. The non-volatile semiconductor memory device uses the variable resistance element for storing information in which a resistance changing layer is interposed between a first electrode and a second electrode, and a buffer layer is inserted between the first electrode and the resistance changing layer where a switching interface is formed. The buffer layer and the resistance changing layer include n-type metal oxides, and materials of the buffer layer and the resistance changing layer are selected such that energy at a bottom of a conduction band of the n-type metal oxide configuring the buffer layer is lower than that of the n-type metal oxide configuring the resistance changing layer.

Non-volatile semiconductor device

A first opening and a second opening are formed at the same time over a first metal wiring and a second metal wiring, respectively which are provided as the same layer on a substrate on which a transistor for selecting a memory cell is formed. Then, a variable resistor and an upper electrode are deposited on a whole surface so as to completely fill the first opening with the upper electrode but not to completely fill the second opening with it. Thereafter, a variable resistive element is formed in the first opening and a via hole to connect to the third metal wiring (bit line), in the second opening, at the same time, by performing back-etching until a surface of the second metal wiring is exposed at a bottom of the second opening.

Nonvolatile semiconductor memory device and method for producing the same

A manufacturing method for a variable resistive element according to which a stable switching operation can be achieved with excellent reproducibility is provided. A conductive thin film is deposited on a semiconductor substrate and patterned to a predetermined form, and after that, a first interlayer insulating film is deposited. An opening is then created in a predetermined location on the first interlayer insulating film in such a manner that the upper surface of the conductive thin film is exposed and the thickness of the conductive thin film formed at the bottom of this opening is reduced through processing, and after that, an oxidation process is carried out on the periphery of the exposed conductive thin film. As a result, a variable resistor film is formed in the peripheral region of the opening, and this variable resistor film divides the conductive thin film into a first electrode and a second electrode.

Manufacturing method for variable resistive element

It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of &#x2267;3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N&#x2014;H bond density of the silicon nitride film is 1.0&#xd7;10pieces/cmor less. According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.

Method for forming interlayer insulation film

A method for producing a semiconductor device comprises forming an opening by etching process using a resist pattern as a mask in a multi-layered film having a first organic insulating film, a first etching stop film and a second organic insulating film being layered in this order such that the opening penetrates from the first organic insulating film to the second organic insulating film, wherein a second etching stop film is formed between the resist pattern and the second organic insulating film to protect the second organic insulating film from being etched during the formation of the opening.

Method for producing semiconductor device

A semiconductor device comprising: a MOS transistor having a gate electrode formed on a semiconductor substrate, a wiring connected to the gate electrode via a first insulating film, an antenna pattern for reducing plasma damage in the form of lines/spaces connected to the wiring, and a second insulating film formed on the wiring and the antenna pattern.

Semiconductor device with antenna pattern for reducing plasma damage

A method for forming an insulating film, wherein a precursor film of a coating type insulating film having Si&mdash;H bonding is coated, the precursor film is calcined in an atmosphere containing at least one of an inert gas and oxygen gas for converting it into a ceramic film as the insulating film, and then the ceramic film is cooled under reduced pressure lower than that for the calcination.

Growing community of inventors

Osaka, Japan

Yushi Inoue