Applied Materials, Inc.

Yusheng Zhou

Amit Kumar Bansal

Sanjeev Baluja

Kalyanjit Ghosh

Tejas Ulavi

Shailendra Srivastava

Ganesh Balasubramanian

Deenesh Padhi

Tza-Jing Gung

Xinhai Han

Mukund Srinivasan

Zhijun Jiang

Mayur G Kulkarni

Juan Carlos Rocha

Masaki Ogata

Kaushik Comandoor Alayavalli

Yongjing Lin

Yuxing Zhang

Shawyon Jafari

Priyanka Dash

Qiang Ma

Daniel Hwung

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Method and system for cleaning a process chamber

Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of SiN. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

On stack overlay improvement for 3D NAND

Method for cleaning a process chamber

Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

System and method for substrate processing chambers

Growing community of inventors

Sunnyvale, CA, United States of America

Yusheng Zhou