Globalfoundries U.S. Inc.

Globalfoundries Inc.

Khalifa University

Yusheng Bian

Ajey Poovannummoottil Jacob

Michal Rakowski

Steven M Shank

Roderick Alan Augur

Kenneth John Giewont

Karen A Nummy

Bo Peng

Won Suk Lee

Abdelsalam A Aboketaf

Abu Thomas

Asif J Chowdhury

Judson Robert Holt

Theodore James Letavic

Siva P Adusumilli

Andreas Daniel Stricker

Kevin K Dezfulian

Vibhor Jain

Mark Levy

Ryan W Sporer

Sujith Chandran

Takako Hirokawa

Shesh Mani Pandey

Edward William Kiewra

Nicholas A Polomoff

Hemant M Dixit

Qizhi Liu

Bartlomiej Jan Pawlak

Thomas F Houghton

Keith Donegan

Jaime Viegas

Brett T Cucci

Francis Afzal

Alec Hammond

Thomas Houghton

Petar I Todorov

Colleen Meagher

Hanyi Ding

Benjamin V Fasano

George Robert Mulfinger

Ravi Prakash Srivastava

Akhilesh Ramlaut Jaiswal

Zhuojie Wu

Koushik Ramachandran

Oscar Restrepo

Asli Sahin

Abdelsalam Aboketaf

Marcus Dahlem

Anthony K Stamper

John J Ellis-Monaghan

Robert K Leidy

John Joseph Pekarik

William James Taylor, Jr

Alexander M Derrickson

David C Pritchard

Norman Whitelaw Robson

Alexander Lee Martin

Domingo A Ferrer

Elizabeth Strehlow

Tymon Barwicz

Robert J Fox, Iii

Uppili S Raghunathan

Dali Shao

Arpan Dasgupta

Laura J Silverstein

Adam S Rosenfeld

Spencer H Porter

Aboketaf Abdelsalam

Bob Mulfinger

Michel Rakowski

Bruna Paredes

Rod Augur

Sunoo Kim

Eduardo Cruz Silva

Carrie Yurkon

Humarira Zafar

John M Safran

Thomas G Weeks, Iii

Marios Papadovasilakis

Yonas Gebregiorgis

Subramanian Krishnamurthy

Lin Jiang

Structures including a grating coupler and a layer that exhibits an electric-field-induced Pockels effect and methods of forming such structures. The structure comprises a first grating coupler on a substrate, a second grating coupler having an overlapping relationship with the first grating coupler, and a layer including a portion having an overlapping relationship with the second grating coupler. The layer comprises a material that exhibits an electric-field-induced Pockels effect.

Structures including a grating coupler and a layer exhibiting an electric-field-induced pockels effect

The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

Lateral phototransistor

A photonic integrated circuit (PIC) includes a waveguide in or over a semiconductor substrate. The waveguide has a terminal end. The PIC also includes an optical absorber having a curved shape adjacent to opposing sides and an endwall of the terminal end of the waveguide, i.e., it surrounds the terminal end of the waveguide. The optical absorber is multi-layered and includes a light absorbing layer. The light absorbing layer may include germanium or a vanadate. The optical absorber terminates or attenuates any stray optical signals from the waveguide while maintaining low back reflection.

Photonic integrated circuit including optical absorber for terminal end of waveguide

Structures including a cavity adjacent to an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate including a cavity with a sidewall, a dielectric layer on the semiconductor substrate, and an edge coupler on the dielectric layer. The structure further comprises a fill region including a plurality of fill features adjacent to the edge coupler. The fill region includes a reference marker at least partially surrounded by the plurality of fill features, and the reference marker has a perimeter that surrounds a surface area of the dielectric layer, and the surface area overlaps with a portion of the sidewall of the cavity.

Reference markers adjacent to a cavity in a photonics chip

Structures including an optical phase shifter and methods of forming a structure including an optical phase shifter. The structure comprises an optical phase shifter including a waveguide core having a first branch and a second branch laterally spaced from the first branch. The structure further comprises a thermoelectric device including a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a series circuit. The first plurality of pillars and the second plurality of pillars disposed adjacent to the first branch of the waveguide core, the first plurality of pillars comprises an n-type semiconductor material, and the second plurality of pillars comprises a p-type semiconductor material.

Optical phase shifter with one or more integrated thermoelectric devices

IC chips for photonics applications are disclosed. An example IC chip includes a substrate, an optical component above the substrate, and a first connection level above the substrate. The first connection level includes the optical component and a first cladding structure, in which the optical component is covered by the first cladding structure. The IC chip also includes a second connection level on the first connection level. The second connection level includes a first interlayer dielectric material. The IC chip further includes a second cladding structure directly above the optical component. The second cladding structure has at least a section within the second connection level. The second cladding structure is on the first cladding structure. The second cladding structure is laterally adjacent to and in direct contact with the first interlayer dielectric material. The second cladding structure includes a material different from the first interlayer dielectric material.

Cladding structure in the back end of line of photonics chips

Photonics chip structures including an edge coupler and a layer that exhibits an electric-field-induced Pockels effect and methods of forming such structures. The structure comprises a substrate, an edge coupler on the substrate, and a layer including a portion that has an overlapping relationship with the edge coupler. The layer comprises a material that exhibits an electric-field-induced Pockels effect.

Photonics chip structures including an edge coupler and a layer exhibiting an electric-field-induced Pockels effect

Structures including a calibration marker adjacent to a photonic structure and methods of forming such structures. The structure comprises a semiconductor substrate, a photonic structure, and a back-end-of-line stack over the semiconductor substrate. The back-end-of-line stack includes a plurality of fill features, an exclusion area surrounded by the plurality of fill features, and a calibration marker in the exclusion area. The calibration marker is disposed adjacent to the photonic structure, and the calibration marker includes a feature having a predetermined dimension.

Calibration markers for a photonics chip

Structures for a directional coupler and methods of forming a structure for a directional coupler. The structure comprises a first waveguide core including a first plurality of segments, and a second waveguide core including a second plurality of segments disposed adjacent to the first plurality of segments in a coupling region. The structure further comprises a first cladding layer comprising a first material that has a first refractive index, and a second cladding layer comprising a second material that has a second refractive index different from the first refractive index. The first cladding layer adjoins a first sidewall of each of the first plurality of segments and a first sidewall of each of the second plurality of segments, and the second cladding layer adjoins a second sidewall of each of the first plurality of segments and a second sidewall of each of the second plurality of segments.

Directional couplers with heterogenous claddings

Structures including an edge coupler and methods of forming such structures. The structure comprises an edge coupler including a first portion and a second portion between the first portion and a semiconductor substrate, a first coupling-assistance feature adjacent to the first portion of the edge coupler, and a second coupling-assistance feature adjacent to the first portion of the edge coupler. The first portion of the edge coupler is positioned in a lateral direction between the first coupling-assistance feature and the second coupling-assistance feature.

Edge couplers with coupling-assisting features

Structures including multiple photonics chips and methods of fabricating a structure including multiple photonics chips. The structure comprises a first chip including a first edge and a first plurality of optical couplers disposed at the first edge, and a second chip including a second edge adjacent to the first edge of the first chip and a second plurality of optical couplers. The second plurality of optical couplers are disposed at the second edge adjacent to the first plurality of optical couplers.

Optical input/output interfaces between photonics chips

Structures for an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate, a first waveguide core including a curved section and an end that terminates the curved section, and a second waveguide core including a section disposed adjacent to the curved section of the first waveguide core. The first waveguide core is positioned between the second waveguide core and the semiconductor substrate.

Dual-layer edge couplers with curved coupling-assistance features

Disclosed is a photonic integrated circuit (PIC) structure including a scattering light-based monitor with photodetectors (e.g., PIN and/or avalanche photodiodes) placed adjacent to one or both sides of an end portion (i.e., a coupler) of a waveguide core at an optical interface with another optical device. The photodetectors are placed in such a way as to enable sensing of scattering light emitted from the end portion as light signals are received (e.g., either from the optical device for propagation to the main body of the waveguide core or from the main body for transmission to the optical device). Also disclosed are a monitoring system and method including the PIC chip structure with the above-described scattering light-based monitor. The system and method assess the optical interface using electric signals generated by the photodetectors.

Scattering light-based monitor for photonic integrated circuit, monitoring system and monitoring method

The disclosure relates to a PIC structure including a photonic component on a semiconductor substrate. A passive optical guard is composed of a light absorbing material and is in proximity to the photonic component. The passive optical guard includes at least a portion in an active semiconductor layer of the semiconductor substrate and may be entirely below a first metal layer. The passive optical guard may include at least one of: a germanium body positioned at least partially in a silicon element in the active semiconductor layer, a silicon body having a high dopant concentration in the active semiconductor layer, and a polysilicon body having a high dopant concentration over the silicon body.

Photonic integrated circuit including passive optical guard

Plasmonic photonic structures that include a layer that exhibits an electric-field-induced Pockels effect and methods of forming such structures. The structure comprises a waveguide core on a substrate, a first layer that has an overlapping relationship with the first waveguide core, and a second layer that has an overlapping relationship with the first waveguide core and the first layer. The first layer comprises a metal, and the second layer comprising a material that exhibits an electric-field-induced Pockels effect.

Plasmonic photonic structures including a layer that exhibits an electric-field-induced Pockels effect

Growing community of inventors

Ballston Lake, NY, United States of America

Yusheng Bian