Globalfoundries U.S. Inc.

Globalfoundries Inc.

Khalifa University

Yusheng Bian

Ajey Poovannummoottil Jacob

Michal Rakowski

Steven M Shank

Roderick Alan Augur

Kenneth John Giewont

Bo Peng

Won Suk Lee

Karen A Nummy

Abdelsalam A Aboketaf

Abu Thomas

Asif J Chowdhury

Theodore James Letavic

Judson Robert Holt

Siva P Adusumilli

Mark Levy

Andreas Daniel Stricker

Sujith Chandran

Nicholas A Polomoff

Ryan W Sporer

Kevin K Dezfulian

Hemant M Dixit

Qizhi Liu

Vibhor Jain

Shesh Mani Pandey

Edward William Kiewra

Bartlomiej Jan Pawlak

Thomas F Houghton

Jaime Viegas

Brett T Cucci

Francis Afzal

Alec Hammond

Petar I Todorov

Colleen Meagher

Hanyi Ding

Benjamin V Fasano

George Robert Mulfinger

Akhilesh Ramlaut Jaiswal

Koushik Ramachandran

Oscar Restrepo

Asli Sahin

Marcus Dahlem

Takako Hirokawa

Anthony K Stamper

John J Ellis-Monaghan

Robert K Leidy

John Joseph Pekarik

William James Taylor, Jr

Ravi Prakash Srivastava

David C Pritchard

Alexander Lee Martin

Domingo A Ferrer

Elizabeth Strehlow

Tymon Barwicz

Keith Donegan

Robert J Fox, Iii

Dali Shao

Laura J Silverstein

Spencer H Porter

Aboketaf Abdelsalam

Abdelsalam Aboketaf

Eduardo Cruz Silva

Sunoo Kim

Michel Rakowski

Rod Augur

Bob Mulfinger

Adam Rosenfeld

Humarira Zafar

Bruna Paredes

Thomas G Weeks, Iii

Marios Papadovasilakis

Yonas Gebregiorgis

Subramanian Krishnamurthy

Lin Jiang

The present disclosure relates to semiconductor structures and, more particularly, to hybrid edge couplers with voids and methods of manufacture. The structure includes: a dielectric material; at least one waveguide structure embedded within the dielectric material; and at least one airgap within the dielectric material and extending along a length of the at least one waveguide structure.

Hybrid edge couplers with voids

Structures for a waveguide and methods of forming a waveguide. The structure comprises a substrate, a waveguide core comprising a compound semiconductor material, and a layer disposed on the substrate. The layer comprises the compound semiconductor material, and the layer includes a cavity positioned beneath the waveguide core.

Compound-semiconductor waveguides with airgap cladding

Structures for a polarization rotator and methods of forming a structure for a polarization rotator. The structure comprises a first waveguide core having a first section, a second section, a first terminating end, and a second terminating end opposite to the first terminating end. The first and second sections of the first waveguide core are arranged between the first terminating end and the second terminating end. The structure further comprises a second waveguide core including a first tapered section having a first overlapping arrangement with the first section of the first waveguide core and a second tapered section having a second overlapping arrangement with the second section of the first waveguide core. The first waveguide core comprises a first material, and the second waveguide core comprises a second material different from the first material.

Polarization rotators with overlapping waveguide cores

Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure comprises a spiral waveguide core having an outer perimeter. The structure further comprises a plurality of waveguide cores. Each waveguide core has a section disposed adjacent to the outer perimeter of the spiral waveguide core.

Optical power splitters incorporating one or more spiral elements

A structure or PIC structure includes a hybrid plasmonic (HP) waveguide. The HP waveguide includes a waveguide core, and a metal silicide layer contacting the waveguide core. The metal silicide layer replaces noble metals typically provided in hybrid plasmonic waveguides, providing improved optical signal containment characteristics. The metal silicide layer is also compatible with CMOS fabrication techniques, and capable of additional scaling with other CMOS structures. The HP waveguide also has a reduce form factor compared to conventional HP waveguides, providing room for more waveguides closer together.

Structure including hybrid plasmonic waveguide using metal silicide layer

Structures for a waveguide escalator and methods of forming such structures. A structure comprises a first waveguide core, and a back-end-of-line stack including a first dielectric layer, a second dielectric layer on the first dielectric layer, an opening in the second dielectric layer, a second waveguide core including a section that overlaps with a section of the first waveguide core, and a plurality of third waveguide cores disposed between the section of the first waveguide core and the section of the second waveguide core. The plurality of third waveguide cores are positioned inside the opening in the second dielectric layer, the first dielectric layer comprises a first material with a first refractive index, and the second dielectric layer comprises a second material with a second refractive index different from the first refractive index.

Waveguide escalators for a photonics chip

Structures including an edge coupler and methods of forming such structures. The structure comprises a dielectric layer on a semiconductor substrate. The dielectric layer includes a cavity and an edge defining a boundary of the cavity. The structure further comprises an edge coupler including a waveguide core. The waveguide core includes a portion that extends past the edge of the dielectric layer and overhangs the cavity. The structure further comprises a heater positioned adjacent to the portion of the waveguide core. The heater is spaced by a gap from the portion of the waveguide core.

Edge couplers with a fine-alignment mechanism

Structures for a grating that may be deployed in edge coupler and methods of forming such structures. The structure comprises a waveguide core positioned on a substrate. The waveguide core includes a longitudinal axis and a grating having first and second segments positioned along the longitudinal axis in a spaced-apart arrangement. The first segment has a first sidewall sloped at a first angle relative to the longitudinal axis and a second sidewall oriented transverse to the longitudinal axis. The second segment has a first sidewall sloped at a second angle relative to the longitudinal axis and a second sidewall oriented transverse to the longitudinal axis. The first sidewall of the first segment positioned adjacent to the first sidewall of the second segment.

Gratings with non-rectangular segments

Structures including a ring resonator and methods of fabricating a structure including a ring resonator. The structure comprises an optical component, a first ring resonator positioned adjacent to the optical component, and a second ring resonator spaced in a vertical direction from the first ring resonator. The first ring resonator and the second ring resonator have an overlapping relationship.

Photonics structures with stacked ring resonators

Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a photodetector including a pad having a side edge and a light-absorbing layer disposed on the pad. The structure further comprises a waveguide core including a tapered section positioned adjacent to the side edge of the pad and the light-absorbing layer. The tapered section has a width dimension that decreases with decreasing distance from the side edge of the pad.

Photodetectors with a tapered interface

Structures for a photonic chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector including a pad, a first semiconductor layer on the pad, and a second semiconductor layer on the pad. The second semiconductor layer is laterally spaced from the first semiconductor layer. The structure further comprises a first waveguide core connected to the pad adjacent to the first semiconductor layer, and a second waveguide core connected to the pad adjacent to the second semiconductor layer.

Photodetectors with multiple light-absorbing semiconductor layers

A structure includes a dielectric waveguide, and at least one grating coupler adjacent the dielectric waveguide. Each grating coupler includes a set of parallel optofluidic grating channels oriented orthogonally to the dielectric waveguide. The structure may also include a radiation source operatively coupled to the dielectric waveguide, and an optical receiver such as a photosensor adjacent the grating coupler(s). The structure may be used as part of an optofluidic sensor system for, for example, biochemical applications.

Structure including grating coupler with optofluidic grating channels

Structures for an optical coupler and methods of forming an optical coupler. The structure comprises a first waveguide core including a first tapered section, a second waveguide core including a second tapered section overlapped with the first tapered section, and an active layer including a third tapered section overlapped with the second tapered section. The first waveguide core comprises a first passive material, the second waveguide core comprises a second passive material, and the active layer comprises an active material.

Structures for an optical coupler and related methods

Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be provided in the ILD layer. A lower cladding layer defines a lower surface of the nitride waveguide(s). The lower cladding layer has a lower refractive index than the nitride waveguide(s). Additional lower refractive index cladding layers can be provided on the upper surface and/or sidewalls of the nitride waveguide(s). The enlarged nitride waveguide may be implemented with other conventional silicon and nitride waveguides.

Enlarged multilayer nitride waveguide for photonic integrated circuit

Structures for an optical component, such as an optical reflector or an Echelle grating, and methods of forming such structures. The structure comprises a first waveguide core positioned in a vertical direction over a semiconductor substrate. The first waveguide core includes a tapered section and a plurality of segments separated by a plurality of gaps. A second waveguide core, which is positioned in the vertical direction relative to the first waveguide core, includes a portion positioned adjacent to the first waveguide core.

Optical components with one or more embedded Bragg reflectors and tapered waveguide cores

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Ballston Lake, NY, United States of America

Yusheng Bian