Huawei Technologies Co., Limited

Huawei Digital Power Technologies Co., Ltd.

Yushan Li

Qimeng Jiang

Hanxing Wang

An ESD protection circuit is provided, including a negative ESD protection module and a positive ESD protection module, where the negative ESD protection module includes a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor, and the positive ESD protection module includes a fourth field effect transistor. When a negative ESD event occurs, there is a comparatively large transient voltage at a gate of a P-type enhanced GaN power device relative to a source of the P-type enhanced GaN power device. Therefore, a displacement current from the source to the gate of the P-type enhanced GaN power device is generated on the charging capacitor. A voltage drop generated by the displacement current on the first resistor may enable the first field effect transistor and the second field effect transistor to form a path when the first field effect transistor is turned on.

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Shenzhen, China

Yushan Li