Tokyo Electron Limited

Rohm Co., Ltd.

Osaka University

Yusaku Kashiwagi

Takashi Matsumoto

Shuji Azumo

Yumiko Kawano

Heiji Watanabe

Takayoshi Shimura

Takuji Hosoi

Masahito Sugiura

Yasuhiro Oshima

Kenjiro Koizumi

Gishi Chung

Shinji Ide

Yoshihisa Kagawa

Kandabara N Tapily

Takashi Nakamura

Tadahiro Ishizaka

Gerrit J Leusink

Masatoshi Aketa

Hiroki Murakami

Masaru Sasaki

Kenji Yamamoto

Kohei Kawamura

Koji Akiyama

Yuichiro Morozumi

Yu Wamura

Katsushige Harada

Michitaka Aita

Kosuke Takahashi

Satohiko Hoshino

Hajime Nakabayashi

Yoshihiro Kato

Hirokazu Asahara

Taiki Katou

A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiXor RSiHClXonto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, Xis selected from a group consisting of H, F, Cl, Br and I, and Xis one selected from a group consisting of Cl, Br and I.

Film forming method for SiC film

A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiOlayer and a high-k layer on the base SiOlayer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.

Semiconductor device including an MIS structure

A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO, Pt, Pd, CuO, and CuO, using an Ru(EtCp)gas and an Ogas; and selectively forming a first SiO-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiOfilm only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Selective film forming method and method of manufacturing semiconductor device

Embodiments of the invention describe methods for selective vertical growth of dielectric material on a dielectric substrate. According to one embodiment, the method includes providing a planarized substrate containing a first material having a recessed feature that is filled with a second material, selectively depositing a graphene layer on the second material relative to the first material, selectively depositing a SiOfilm on the first material relative to the graphene layer, and removing the graphene layer from the substrate. According to one embodiment, the first material includes a dielectric material and the second material includes a metal layer.

Method of selective vertical growth of a dielectric material on a dielectric substrate

A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Method for forming carbon nanotubes and carbon nanotube film forming apparatus

Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Film forming method and film forming apparatus

A graphene patterning method for forming a graphene of predetermined pattern includes bringing a patterning member in which a catalyst metal layer of the predetermined pattern is formed into contact with a substrate having a graphene oxide film. In bringing the patterning member, the catalyst metal layer is brought into contact with the graphene oxide film.

Graphene patterning method and patterning member

A first substrate has a source material forming surface on which source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate has a film forming surface on which the polymerized film will be formed. Here, the first substrate and the second substrate are installed in a processing chamber such that the source material forming surface and the film forming surface face each other. Then, the first substrate is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials and evaporated from the first substrate on the film forming surface of the second substrate.

Polymerized film forming method and polymerized film forming apparatus

A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200&#xb0; C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.

Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium

The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

Film forming method for dielectric film

A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Substrate processing method

The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

Fabrication of low dielectric constant insulating film

A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

Growing community of inventors

Nirasaki, Japan

Yusaku Kashiwagi