Globalfoundries U.S. Inc.

Yurong Wen

Ruilong Xie

Hui Zang

Garo Jacques Derderian

Laertis Economikos

Jiehui Shu

Shesh Mani Pandey

Guowei Xu

An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.

Vertical resistor adjacent inactive gate over trench isolation

Growing community of inventors

Singapore, Singapore

Yurong Wen