Tokyo Ohka Kogyo Co., Ltd.

Yuriko Shirai

Jun Koshiyama

Takako Hirosaki

Atsushi Sawano

Mai Sugawara

Ryusuke Uchida

Takumi Namiki

Takuya Ohhashi

Naohisa Ueno

Masahiro Masujima

A cleaning liquid which includes 3-alkoxy-3-methyl-1-butanol represented by the following general formula (1); at least one of diethylene glycol monomethyl ether and triethylene glycol monomethyl ether; and quaternary ammonium hydroxide: in which Rrepresents an alkyl group having 1 to 5 carbon atoms.

Cleaning solution, method of removing a removal target and method of etching a substrate using said cleaning solution

A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, Rto Rrepresent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of Rto Rrepresents a hydrogen atom. One of Rto Rmay bind with Rto form a ring structure. Yand Yrepresent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5. 

Stripping solution for photolithography and pattern formation method

A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.

Method for forming fine pattern, and coating agent for pattern fining

The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, Rand Rrepresent a direct bond or a methylene chain; Rand Rrepresent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by &#x2014;(CH)&#x2014;O&#x2014;R&#x2014;R; and at least one of Rand Ris a group represented by &#x2014;(CH)&#x2014;O&#x2014;R&#x2014;R, wherein: Rrepresents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with &#x2014;O&#x2014;; Rrepresents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in Rand Ris 1 or 2.

Growing community of inventors

Kawasaki, Japan

Yuriko Shirai