Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Az Electronic Materials USA Corp.

Yuriko Matsuura

Takashi Sekito

Shigemasa Nakasugi

Hiroshi Yanagita

Yusuke Hama

Xiaowei Wang

Tatsuro Nagahara

Georg Pawlowski

Go Noya

Kazuma Yamamoto

Wenbing Kang

Tomoyasu Yashima

Sara Tsuyuki

Kazunori Kurosawa

[Problem to be Solved] An object is to provide a compound with good heat resistance. And another object is to provide a coating made exhibits less film shrinkage, good gap filling property and good planarization. [Solution] The present invention provides an ethynyl derived composite and a composition comprising thereof. And the present invention provides a method for manufacturing a coating by it, and a method for manufacturing a device.

Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating

An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.

Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same

The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same

The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.

Rinse composition, a method for forming resist patterns and a method for making semiconductor devices

Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (Rand Rmay be the same as or different from each other and represent a hydrogen atom or a methyl group, Rand Rmay be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, Rrepresents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and Rand Rmay be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above. 

Rinsing liquid for lithography and pattern forming method using same

The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.

Rinse solution for lithography and pattern formation method employing the same

The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.

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Kakegawa, Japan

Yuriko Matsuura