Fairchild Semiconductor Corporation

Yuri V Sokolov

Qi Wang

Minhua Li

Donald Roy

Tyler Hook

An apparatus for bonding substrates includes a base member having a top surface and a recessed region which is configured for receiving at least a first substrate. The apparatus also has a plurality of support members disposed over the top surface for supporting a second substrate peripherally over the first substrate. Each support member is configured to vary a separation between the first substrate and the second substrate. Moreover, a pressure bar is configured to cause a center portion of the second substrate to contact the first substrate while the support members maintain peripheral separation between the first substrate and the second substrate. In operation, a bonded region between the first and the second substrates is expanded radially from the center portion when the support members are positioned to reduce the separation between the first and the second substrates.

Method and apparatus for bonded substrates

A vertical semiconductor device includes a bottom metal layer and a first P-type semiconductor layer overlying the bottom metal layer. The first P-type semiconductor layer is characterized by a surface crystal orientation of (110) and a first conductivity. The first P-type semiconductor layer is heavily doped. The vertical semiconductor device also includes a second P-type semiconductor layer overlying the first P-type semiconductor layer. The second semiconductor layer has a surface crystal orientation of (110) and is characterized by a lower conductivity than the first conductivity. The vertical semiconductor device also has a top metal layer overlying the second P-type semiconductor layer. A current conduction from the top metal layer to the bottom metal layer and through the second p-type semiconductor layer is characterized by a hole mobility along a &#x3c;110&#x3e; crystalline orientation and on (110) crystalline plane.

Semiconductor device with (110)-oriented silicon

A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a &#x3c;110&#x3e; direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.

A method for forming bonded substrates includes providing a plurality of substrates, each of which having a top surface. A characteristic length for each of the plurality of substrates is determined by: determining a topographical profile of the top surface of the substrate from an interior portion to an edge portion along a radial direction, determining a highest point of the profile, and defining the characteristic length as a distance from the highest point to the edge portion. A first substrate and a second substrate are selected where at least one of the first or the second substrates has a characteristic length shorter than a predetermined length. The first substrate and the second substrate are brought into contact and form bonded substrates, with the top surface of the first substrate facing the top surface of the second substrate.

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Sandy, UT, United States of America

Yuri V Sokolov