Samsung Electronics Co., Ltd.

Yuri Masuoka

Je-min Yoo

Yul Hee Lee

Sang-deok Kwon

So-Yeon Kim

Hoon-Sung Choi

Dong-Il Park

Jaechul Kim

Chanwook Lee

Seungkwon Kim

Younggun Ko

A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.

Method of fabricating semiconductor device

Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction.

Semiconductor device

Semiconductor device and method of fabricating the same

Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.

Semiconductor devices with various line widths and method of manufacturing the same

A semiconductor device comprises: a substrate; a first well region of a first conductivity type and a second well region of a second conductivity type formed horizontally adjacent to each other in the substrate; a buried insulation layer formed on the first well region and the second well region; a first semiconductor layer formed to vertically overlap the first well region, and a second semiconductor layer formed to vertically overlap the second well region, on the buried insulation layer; a first isolation layer formed between the first semiconductor layer and the second semiconductor layer on the buried insulation layer; and a conductive layer formed on the first semiconductor layer and the second semiconductor layer to extend over the first semiconductor layer and the second semiconductor layer.

A semiconductor device includes a substrate including an active fin and an isolation layer thereon, a first gate structure on the active fin, the first gate structure including a first gate insulation layer pattern and a first metal pattern, and the first metal pattern having a first conductivity type and directly contacting the first gate insulation layer pattern, a first channel region at a portion of the active fin facing a bottom surface of the first gate structure, the first channel region including impurities having the first conductivity type, and first source/drain regions at upper portions of the active fin adjacent to opposite sidewalls of the first gate structure, the first source/drain regions including impurities having a second conductivity type different from the first conductivity type.

Growing community of inventors

Seongnam-si, South Korea

Yuri Masuoka