Widetronix, Inc.

Cornell Research Foundation Inc.

Yuri Makarov

Michael Spencer

Huaqiang Wu

Phani Konkapaka

A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).

Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor

A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes a method of substrate preparation, which allows for the growth of 'on-axis' SiC films, plus an approach giving the opportunity to grow silicon carbide on singular (a small-angle miscut) substrates, using halogenated carbon-containing precursors (carbon tetrachloride, CCl, or halogenated hydrocarbons, CHCl, CHCl, or CHCl, or similar compounds or chemicals), or introducing other chlorine-containing species, in the gas phase, in the growth chamber. At gas mixtures greater than the critical amount, small clusters of SiC are etched, before they can become stable nuclei. The presence of chlorine and the formation of gas species allow an increased removal rate of these nuclei, in contrast to the growth without the presence of chlorine. Or, alternatively, the novel precursors introduced in the growth system reduce the effective supersaturation ratio of the Si species in the growth layer. The reduction of the supersaturation ratio reduces or eliminates the 2D (and 3C&#x2014;SiC) nucleation which would occur due to the large terrace widths present on the on-axis wafers. This allows the growth of Silicon Carbide epitaxial layers on SiC substrates or composite substrates with monocrystalline layers. This can also be applied to the other semiconductors, chemicals, compounds, materials, growth methods, or devices.

Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials

An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CClor halogenated hydrocarbons, CHCl, CHCl, CHCl, etc.), or introducing other chlorine-containing species in the gas phase in the growth chamber. The etching effect, proper ranges, and high temperature growth are also examined.

Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor

GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and Nvapors at temperatures between approximately 1000 and 1200&#xb0; C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.

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Richmond, VA, United States of America

Yuri Makarov