Texas Instruments Corporation

Yuri E Solomentsev

Stephan Grunow

Satyavolu Srinivas Papa Rao

Kenneth D Brennan

Darius Lammont Crenshaw

Phillip D Matz

Sameer Kumar Ajmera

Somit Joshi

Montray Leavy

The formation of a MIM (metal insulator metal) capacitor () and concurrent formation of a resistor () is disclosed. A copper diffusion barrier () is formed over a copper deposition () that serves as a bottom electrode () of the capacitor (). The copper diffusion barrier () mitigates unwanted diffusion of copper from the copper deposition (), and is formed via electro-less deposition such that little to none of the barrier material is deposited at locations other than over a top surface () of the deposition of copper/bottom electrode. Subsequently, layers of dielectric () and conductive () materials are applied to form a dielectric () and top electrode () of the MIM capacitor (), respectively, where the layer of conductive top electrode material () also functions to concurrently develop the resistor () on the same chip as the capacitor ().

Single mask MIM capacitor and resistor with in trench copper drift barrier

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Austin, TX, United States of America

Yuri E Solomentsev