Disco Corporation

Yuri Ban

Yuki Ogawa

Tsubasa Obata

Kensuke Nagaoka

Kentaro Odanaka

Yuta Yoshida

A laser processing method for a wafer that is segmented by plural planned dividing lines set on a surface in a lattice manner uses a laser processing apparatus including a laser beam irradiation unit that irradiates, through a collecting lens, the wafer held by a chuck table, with plural laser beams formed by being oscillated by a laser beam oscillator and being split by a laser beam splitting unit. The method includes a processed groove forming step of irradiating the wafer with the plural laser beams along the planned dividing lines and forming a processed groove along the planned dividing lines. The plural laser beams split by the laser beam splitting unit are arranged in a line manner along a direction that is non-parallel to an extension direction of the planned dividing line irradiated with the plural laser beams.

Laser processing method of wafer using plural laser beams

A laser processing apparatus includes: a chuck table that holds a packaged wafer by a holding surface; a laser processing unit that applies a laser beam to the packaged wafer to form a through-groove along each division line; an X-axis moving unit that moves the chuck table in an X-axis direction; and an examination unit. The chuck table includes: a holding member that forms the holding surface; and a light emitting body. The examination unit includes: a line sensor that extends in a Y-axis direction; and a control unit that determines the result of processing through reception by the line sensor of light from the light emitting body through the through-groove. The line sensor images the whole surface of the packaged wafer being held by the chuck table.

Laser processing apparatus

Disclosed herein is a resin package substrate processing method for processing a resin package substrate including a mold resin in which a filler is mixed. The resin package substrate processing method includes a fixing step of fixing the resin package substrate through an adhesive tape to an annular frame, a dividing step of applying a laser beam having an absorption wavelength to the mold resin of the resin package substrate, to the mold resin to thereby form a plurality of division grooves dividing the resin package substrate into a plurality of package device chips, an interchip distance increasing step of expanding the adhesive tape to thereby increase the distance between any adjacent ones of the plural package device chips of the resin package substrate, and a cleaning step of supplying a cleaning liquid to the resin package substrate to thereby remove the filler caught between the adjacent package device chips.

Resin package substrate processing method

A method for dividing a wafer including: attaching a protective tape to a functional layer of the wafer with the adhesive layer of the tape in contact with the functional layer; and a wafer dividing step. The dividing step includes a cut groove forming step and a laser processing step. The cut groove forming step uses a blade to form a cut groove with a depth that does not reach the functional layer, resulting in part of the substrate being left along each division line. The laser processing step includes applying a laser beam to the part of the substrate left after the cut groove forming step and the functional layer of the wafer to form a laser processed groove having a depth reaching the tape. The tape is closely attached to the functional layer during the tape attaching step to prevent the adhesion of debris to the devices.

Wafer processing method including attaching a protective tape to a front side of a functional layer to prevent debris adhesion

A wafer having a substrate and a functional layer formed on the front side of the substrate is processed by attaching a protective tape curable by an external stimulation to the front side of the functional layer. The substrate is cut from the back side along each division line by using a cutting blade, thereby forming a cut groove having a depth not reaching the functional layer, with a part of the substrate left between the bottom of the cut groove and the functional layer. A laser beam is applied along the cut groove, thereby dividing the remaining part of the substrate to divide the wafer into device chips. When the groove is formed, an uncut portion in which the cut groove is not formed is left in a peripheral marginal area of the wafer.

Wafer processing method

Disclosed herein is a wafer processing method for dividing a wafer into a plurality of individual devices along a plurality of crossing division lines. The wafer is composed of a substrate and a functional layer formed on the front side of the substrate. The division lines are formed on the front side of the functional layer. A laser beam having a transmission wavelength to the substrate is applied to the wafer from the back side thereof to detect the height of an interface between the functional layer and the substrate in an area corresponding to each division line. The depth of cut by a cutting blade for cutting the substrate is next set according to the height detected above. The back side of the substrate is next cut by the cutting blade according to the depth of cut set above to thereby form a cut groove having a depth not reaching the functional layer with a remaining part of the substrate left between the bottom of the cut groove and the functional layer along each division line, the remaining part having a uniform thickness. Thereafter, the remaining part and the functional layer are cut along each division line to thereby divide the wafer.

A wafer has a substrate, a functional layer and division lines. The wafer is held on a chuck table with a protective member attached to the front side of the functional layer in contact with the chuck table. The height of the back side of the wafer is detected in a Z direction along each division line while moving the chuck table in an X direction. An X coordinate is recorded for each division line, as well as a corresponding Z coordinate. A cutting blade is positioned on the back side of the wafer and moved in the Z direction according to the recorded X and Z coordinates while moving the chuck table in the X direction to thereby form a cut groove having a depth not reaching the functional layer, with a part of the substrate left between the bottom of the cut groove and the functional layer.

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Tokyo, Japan

Yuri Ban