Nanjing University

Micro-tech (nanjing) Co., Ltd.

Yuqian Li

Yi Shi

Feng Yan

Haowen Ma

Limin Zhang

Cheng Yang

Cheng Mao

Xiaofeng Bu

Xiangshun Kong

Zhijian Huang

Changqing Li

Derong Leng

Chunjun Liu

Hongxia Yu

Si Wei

Nanyang Yu

Zhangnan Li

Xu Cao

Yongxue Zhao

Huan Liu

Provided is a medical device implantation apparatus, comprising: an outer sheath, connected to a first portion of a handle and extending from a proximal end to a distal end; a middle sheath, the middle sheath being arranged in the outer sheath, and the middle sheath being connected to a second portion of the handle; an inner sheath, the inner sheath being allowed to pass through the middle sheath, the inner sheath being connected to a third portion of the handle, and the inner sheath being movable relative to the outer sheath; outer casings, with at least two outer casings being provided, and a distal end of the inner sheath being respectively fixedly connected to the outer casings; and a medical device, arranged around the inner sheath and partially accommodated in the outer casings.

Medical device implantation apparatus

A photosensitive detector includes an array of detection units, each detection unit having a light-sensing transistor (), a charge storage transistor () and a reading transistor (), or comprising a light-sensing transistor, a charge transfer transistor (), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.

Photosensitive detector, imaging sensor chip formed using the photosentive detector, and detection method

Disclosed is a method for high-throughput screening of non-target biomarkers based on metabolic disturbance caused by pollutants, belonging to the field of environmental exposure and health. The method includes the following steps: (1) extracting to obtain extracts to be tested; (2) performing chromatographic analysis to obtain a spectrum containing chromatographic peaks; (3) identifying and labeling features of pollutants, taking chromatographic peaks other than the features of the pollutants as features of potential metabolites, and performing non-target labeling of the features of the potential metabolites; (4) establishing a linear regression model by taking the peak areas of the features of the potential metabolites as dependent variables and the peak areas of the features of the pollutants as independent variables; (5) operating the model, and performing non-target screening of the biomarkers to preliminarily obtain related biomarkers; (6) identifying the MS spectra and MS/MS spectra of the preliminarily obtained biomarkers, and identifying biomarkers related to pollutant exposure. The disclosed method improves the accuracy of biomarker screening and the throughput of biomarker screening.

Method for high-throughput screening of non-target biomarkers based on metabolic perturbation caused by pollutants

A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

2&#xd7;2 array arrangement based on composite dielectric gate photosensitive detector and operating method thereof

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Jiangsu, China

Yuqian Li