Purdue Research Foundation

Yuqi Zhu

Feng Zhang

Joerg Appenzeller

Albert V Davydov

Leonid A Bendersky

Sergiy Krylyuk

Huairuo Zhang

A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hphase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Phase transition based resistive random-access memory

A resistive random access memory (Device) is disclosed. The Device includes a substrate, a first electrode formed atop the substrate, a tunneling barrier layer formed atop the first electrode, an active material formed atop the tunneling barrier layer, an isolation layer formed atop the active material, and a second electrode formed atop the isolation layer, the first electrode and the second electrode provide electrical connectivity to external components, where the active material is a phase change material which undergoes phase transition in the presence of an electric field, Joule heating, or a combination thereof.

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West Lafayette, IN, United States of America

Yuqi Zhu