Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Yupeng Gao

Feng Guan

Chao Li

Zhi Hu Wang

Jianhua Du

Zhaohui Qiang

Guangcai Yuan

Xue Dong

Rui Huang

Lizhong Wang

Yang Lv

Chao Luo

Yang Lyu

Lei Chen

Wei He

Chuanxiang Xu

Zhongyuan Sun

Jiangnan Lu

Ying Zhao

Renquan Gu

Kai Sui

Shuilang Dong

Tianmin Zhou

Huili Wu

Shipei Li

Fang He

Chao Dong

Ning Dang

Sheng Xu

Lizhen Zhang

Dongsheng Yin

Xuefei Zhao

Disclosed are an array substrate and a display panel. The array substrate includes: a base substrate; a first thin film transistor on the base substrate; where the first thin film transistor includes: a first gate electrode, a first active layer, a first source electrode, and a first drain electrode; where the first active layer includes: at least one guide structure extending in a first direction; a silicon-based nanowire, disposed on a side of the guide structure facing away from the base substrate; and an extending direction of the silicon-based nanowire is same as an extending direction of the guide structure.

Array substrate and display panel

A thin film transistor, a method for manufacturing the same and a display device are disclosed, the thin film transistor includes: a first electrode, a second electrode, an active layer and a flexible conductive layer located on a substrate, one of the first electrode and the second electrode is a source, and the other thereof is a drain; the active layer is electrically coupled with the first electrode, and an orthographic projection of the active layer on the substrate is within an orthographic projection of the first electrode on the substrate; the flexible conductive layer is located on a side of the active layer away from the first electrode, and electrically couples the active layer with the second electrode.

Thin film transistor and method for manufacturing the same, display device

A method of reducing color breakup of reflection of ambient light in a display panel having a color breakup-prevention structure is provided. The color breakup-prevention structure includes a high refractive index lens layer on a side of a plurality of light emitting elements away from a base substrate; a low refractive index modulation layer on a side of the high refractive index lens layer away from the base substrate; a first color filter layer in a plurality of subpixel regions, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer; and a first black matrix layer in an inter-subpixel region, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer. The high refractive index lens layer includes a plurality of lens portions spaced apart from each other and respectively in the plurality of subpixels.

Method of reducing color breakup of reflection of ambient light in display panel, display panel, display apparatus, and method of fabricating display panel

This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity.

Array substrate, preparation method thereof, and display panel

Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

Fingerprint recognition sensor and manufacturing method thereof, and display device

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

Photodiode, method for preparing the same, and electronic device

The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

Method for preparing array substrate

A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

Photosensor, display apparatus, and method of fabricating photosensor

A display substrate, a display panel, and a manufacturing method and a driving method of a display substrate are provided. The display substrate includes a base substrate, a pixel circuit, and a photosensitive unit. The pixel circuit and the photosensitive unit are on the base substrate, the pixel circuit includes a first transistor, and an orthographic projection of the photosensitive unit on the base substrate at least partially overlaps with an orthographic projection of the first transistor on the base substrate.

Display substrate, display panel, and manufacturing method and driving method of display substrate

The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.

Photoelectric detector, preparation method thereof, display panel and display device

The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.

Thin film transistor, pixel structure, display device and manufacturing method

Growing community of inventors

Beijing, China

Yupeng Gao