Institute of Semiconductors, Guangdong Academy of Sciences

Shenzhen Xiuyuan Electronic Technology Co., Ltd

Yunzhi Ling

Yao Wang

Zhitao Chen

Chuan Hu

Zibai Li

Yinhua Cui

Wei Zhao

Jianguo Ma

Xun Xiang

Yuhao Bi

Xingyu Liu

Siliang He

A substrate bonding method includes: providing a first and a second substrate; forming, on the first substrate, a first metal micro-bump array including first metal pillar(s) formed on the first substrate and first metal nanowires formed thereon and spaced apart from each other; forming, on the second substrate, a second metal micro-bump array including second metal pillar(s) formed on the second substrate and second metal nanowires formed thereon and spaced apart from each other; pressing the first substrate onto the second substrate, such that the first and second metal micro-bump arrays are positioned and staggered with each other, forming a physically interwoven interlocking structure between the first and second metal nanowires; applying a filling material between the first and second substrates; curing the filling material to form a bonding cavity; and then performing confined heating reflux on the first and second metal micro-bump arrays in the bonding cavity.

Substrate bonding method

Provided are a chip interconnection package structure and method, including: forming a sacrificial pattern layer on a support structure; forming an interconnection winding pattern layer on the sacrificial pattern layer, wherein the interconnection winding pattern layer is corresponding to a sacrificial pattern of the sacrificial pattern layer in position; forming a first insulating layer on the interconnection winding pattern layer; forming a plurality of chips arranged at intervals on the first insulating layer, wherein the plurality of chips are respectively corresponding to the interconnection winding pattern of the interconnection winding pattern layer in position; and removing the support structure, and forming, on one side of the sacrificial pattern layer, a first interconnection hole penetrating through the sacrificial pattern, the interconnection winding pattern and the first insulating layer, and making the first interconnection hole aligned and communicated with a first interconnection pin of the chip corresponding in projection position.

Chip interconnection package structure and method

A chip stack packaging structure and method includes: a base chip layer, including a base chip with pins on the front surface; at least one stacked chip layer, which is formed on the base chip layer, has an inter-chip insulating layer and at least one stacked chip attached to the insulating layer and pins on the front surface, where the front surface of the stacked chip faces the front surface of the base chip; and a top insulating layer, stacked on the stacked chip layer farthest from the base chip layer. A vertical interconnection hole is formed inside the inter-chip insulating layer to allow the corresponding pins to be communicated vertically so as to be electrically connected. Inside the vertical interconnection hole, a conductive material layer is formed that makes the corresponding pins electrically connected; the stacked chip is thinned and reduced after being attached to the inter-chip insulating layer.

Chip stack packaging structure and chip stack packaging method

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Yunzhi Ling