Hitachi Global Storage Technologies Netherlands B.v.

Yunxiao Gao

Sue Siyang Zhang

Ming Jiang

Hung-Chin Guthrie

Yinshi Liu

Aron Pentek

Yimin Hsu

Tomohiro Okada

Yasuyuki Okada

Ning Shi

Nian Xiang Sun

Paul Alejon Fontejon, Jr

Alan J Tam

The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a 'self bias' voltage, under RF conditions, and is integrated into the vacuum process.

In-situ method to reduce particle contamination in a vacuum plasma processing tool

A perpendicular write head includes a main pole comprising high moment magnetic layers laminated with both soft magnetic layers and non-magnetic layers for antiferromagnetic coupling (AFC) between the high moment material layers. The perpendicular write head includes a return pole connected to the main pole by a back gap closure at a distal end and separated from the main pole by a gap at an air bearing surface (ABS). A write coil is positioned between the main pole and the return pole and the surface area of the return pole at the ABS is substantially larger than the surface area of the main pole at the ABS.

Laminated high moment magnetic films antiferromagnetic coupling as write pole of perpendicular magnetic recording head

A giant magnetoresistive (GMR) head is formed to include a recess in an overcoat layer that reduces stress on the poles. The process includes depositing a seed layer over the overcoat layer prior to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom is etched in the overcast layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.

Method of fabricating a GMR head

A perpendicular write head includes a main pole comprising a Durimide/Alumina hard mask formed over a laminate layer process to form the main pole without using a liftoff or chemical mechanical polishing process, thereby avoiding rounding corners of the pole, the main pole being controlled in shape for improved control of critical dimension of track width and angle of the bevel to avoid undesirable adjacent track writing.

Method of manufacturing a perpendicular write head

A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.

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Sunnyvale, CA, United States of America

Yunxiao Gao