Samsung Electronics Co., Ltd.

Yunsun Jang

Moorym Choi

Jungtae Sung

A semiconductor device includes first and second substrates including cell and peripheral circuit regions, first and second gate electrode structures, first and second channels, and first to third transistors. The first and second gate electrode structures include first and second gate electrodes in a vertical direction. The first and second channel extend through the first and second gate electrode structures. The first transistor is on the peripheral circuit region. The second gate electrode structure is on the first gate electrode structure and the first transistor. The second and third transistors are on the second gate electrode structure. The second substrate is on the second and third transistors. The first and second channels do not directly contact each other, are electrically connected with each other, and receive electrical signals from the second transistor. The first and third transistors apply electrical signals to the first and second gate electrode structures.

Non-volatile memory device

Provided is a non-volatile memory device including a first structure including a first substrate; a peripheral circuit; a first insulation structure; a plurality of first bonding pads; and a first interconnect structure; a second structure, which includes a conductive etch stop layer; a common source line layer; a stacked structure including alternately stacked gate layers and interlayer insulation layers; a plurality of channel structures penetrating through a cell region of the stacked structure; a second insulation structure; a plurality of second bonding pads; and a second interconnect structure and bonded to the first structure; and a connection layer including a third insulation structure; an input/output via; and an input/output pad, wherein an interface between the second insulation structure and the third insulation structure is disposed at a vertical level between the top surface and the bottom surface of the conductive etch stop layer.

Growing community of inventors

Seoul, South Korea

Yunsun Jang