Samsung Electronics Co., Ltd.

Yunseok Yang

Minhwan An

Oh-seong Kwon

Chul-Hwan Choo

Eungchang Lee

Yunkyeong Jeong

Jin Suk Chung

Yong Shik Shin

Seula Ryu

Jaewoo Shin

A memory device includes a first physical interface, a second physical interface, a first memory core, a second memory core, and a setting circuit. The first memory core is assigned to the first physical interface and includes a plurality of first stacked memory dies and connected via a through electrode. The second memory core is assigned to the second physical interface and includes a plurality of second stacked memory dies connected via a through electrode. The setting circuit sets at least one physical interface to be used for connection with an external device of the memory device among the first physical interface and the second physical interface.

Method to select phys and a configuration of the data path in a multi PHY DRAM

A memory device includes a base die that includes a data signal bump configured to receive a data signal, a first memory stack that includes first memory dies sequentially stacked on the base die, and a second memory stack that includes second memory dies sequentially stacked on the base die and spaced from the first memory stack in a direction parallel to an upper surface of the base die. The base die is configured to selectively provide the data signal received through the data signal bump to one of the first memory stack or the second memory stack based on a selection signal.

Memory device and system device including the same

An input buffer includes a first buffer circuit to amplify a difference between a first input signal and a second input signal; a second buffer circuit formed of a replica circuit of the first buffer circuit to generate a common mode output signal in response to the first input signal; and a detector to compare the common mode output signal with a reference output signal and to control the first and second buffer circuits according to the comparison result such that a level of the common mode output signal coincides with a level of the reference output signal.

Input buffer

A nonvolatile memory device includes a memory cell array comprising memory cells connected to bit lines and word lines; a word line decoder configured to apply word line voltages to the word lines; a bit line selector configured to select at least one bit line of the bit lines; a control logic configured to control the word line decoder and the bit line selector so that write data is programmed in the memory cell array; and a sudden power off (SPO) detection circuit, wherein the SPO detection circuit comprises: a sensing cell; a first driver configured to provide a first voltage to the sensing cell; and a second driver configured to provide a second voltage to the sensing cell, wherein a program state of the sensing cell becomes different depending on an order or a time difference between the first driver and the second driver being powered off.

Growing community of inventors

Hwaseong-si, South Korea

Yunseok Yang