Samsung Electronics Co., Ltd.

Yunrae Cho

Eunkyul Oh

Seunghun Han

Taeheon Kim

Jungmin Ko

Seungduk Baek

Jinyeol Yang

Junyong Noh

Junghoon Han

Yeonjin Lee

Minjung Choi

Chonghee Lee

A semiconductor package includes a package substrate including a redistribution layer including first pads and second pads on an upper surface thereof and a solder mask layer having an opening exposing the first pads entirely and exposing at least portion of each of the second pads, a semiconductor chip on the upper surface of the package substrate and including connection pads electrically connected to the redistribution layer, connection bumps below the semiconductor chip and connecting the connection pads to the first pads, and a non-conductive film layer between the semiconductor chip and the package substrate, wherein the second pads are respectively disposed on both sides of the first pads at least in a first direction, and the connection bumps are spaced apart from the second pads and the solder mask layer in the first direction.

Semiconductor package

An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.

Integrated circuit device having redistribution pattern

The present disclosure relates to a semiconductor package and a manufacturing method thereof. The method includes stacking semiconductor chips using a thermo-compression bonding (TCB) method, where defects are minimized for increased reliability. The semiconductor package includes an interface chip including a first test pad, a bump pad provided inside the first test pad, and a first through silicon via (TSV) provided between the first test pad and the bump pad; at least one memory chip, which is stacked on the interface chip and includes a second test pad, a dummy pad provided inside the second test pad, and a second TSV provided between the second test pad and the dummy pad; and an adhesive layer provided between the interface chip and the at least one memory chip. wherein no bump is provided on the first test pad and the second test pad.

Semiconductor package and method of fabricating the same

A semiconductor chip includes a device layer on a substrate, the device layer including a plurality of semiconductor devices; a wiring structure and a lower inter-wiring dielectric layer each on the device layer, the lower inter-wiring dielectric layer surrounding the wiring structure and having a lower permittivity than silicon oxide; an upper inter-wiring dielectric layer arranged on the lower inter-wiring dielectric layer; an isolation recess arranged along an edge of the substrate, the isolation recess formed on side surfaces of the lower and upper inter-wiring dielectric layers and having a bottom surface at a level equal to or lower than that of a bottom surface of the lower inter-wiring dielectric layer; and a cover dielectric layer covering the side surfaces of the lower and upper inter-wiring dielectric layers and the bottom surface of the isolation recess.

Semiconductor chip including low-k dielectric layer

Growing community of inventors

Guri-si, South Korea

Yunrae Cho