Shenzhen Goodix Technology Co., Ltd.

Shenzhen Weitongbo Technology Co., Ltd.

Yunning Li

Jian Shen

Jianfeng Xue

Wenxuan Wang

Guofeng Yao

Yuan Su

Embodiments of the present disclosure provide a detection circuit for a laser fault injection attack on a chip and a security chip. The detection circuit includes a first capacitor, a second capacitor, a first switch, a second switch, a photosensitive element, a first NMOS transistor, and a second NMOS transistor. A drain of the first NMOS transistor is configured to output a first voltage signal, and a drain of the second NMOS transistor is configured to output a second voltage signal. The first voltage signal and the second voltage signal are configured to indicate that the chip is attacked by laser fault injection, thereby realizing detection of the laser fault injection attack, and ensuring the robustness and security of the chips.

Detection circuit for laser fault injection attack on chip and security chip

The present disclosure provides an image sensor including a substrate () and at least one pixel unit. The pixel unit comprises a photodetector () arranged in the substrate, a photosensitive surface of the photodetector facing a back surface of the substrate to generate a charge upon receiving an incident light from the back surface of the substrate, a spherical crown structure () arranged on the substrate and located on an opposite surface of the photosensitive surface, a conformal dielectric layer () arranged on the spherical crown structure and used to generate a dielectric-layer reflective light when the incident light reaches the conformal dielectric layer, and a reflective layer () arranged on the conformal dielectric layer and used to generate a reflective-layer reflective light when the incident light reaches the reflective layer. In this way, an absorption ratio for the incident light is increased, thereby improving signal quality of an image.

Image sensor and method for manufacturing the same

A PUF device and a method of outputting a random sequence are disclosed. The PUF device includes: at least one processing unit and at least one PUF unit, and a first PUF unit of the at least one PUF unit includes a first MOS transistor and a second MOS transistor, two sources of the two MOS transistors are connected to a same input voltage; two gates of the two MOS transistors are floating; and two drains of the two MOS transistors are respectively connected with a first processing unit, and the first processing unit is configured to: output a first random value corresponding to the first PUF unit according to a difference between two results output by the two drains of the two MOS transistors, when the input voltage is greater than or equal to a preset voltage.

Growing community of inventors

Shenzhen, China

Yunning Li