Imec Vzw

Katholieke Universiteit Leuven

Katholieke Universiteit Leuven, K.u. Leuven Research & Development

Yunlong Li

Gauri Karve

Xavier Rottenberg

Luc Haspeslagh

David Cheyns

Kristof Lodewijks

Deniz Sabuncuoglu Tezcan

Pawel Malinowski

Philippe Soussan

Ming Mao

Stefano Guerrieri

Epimitheas Georgitzikis

Vladimir Pejovic

Luis Moreno Hagelsieb

Deniz Sabuncuoglu

Charles Caer

Deniz Sabuncuogly Teczan

A light sensor for spectrally resolved light detection, said light sensor comprises: an upper reflective element; a lower reflective element; a photo-sensitive element therebetween; a spacer element, configured to form the lower reflective element or arranged between the upper and the lower reflective element; wherein the elements form a stack of layers which define a resonance structure between the upper and the lower reflective element for providing a resonance of light; wherein the spacer element comprises at least two different materials, a distribution of which is different between different pixels in an array of pixels such that a resonance wavelength is different for different pixels; and wherein for a plurality of pixels, geometrical structures smaller than the resonance wavelength are defined by the at least two different materials.

Light sensor and a method for manufacturing a light sensor

According to a preferred embodiment of the method of the invention, an assembly is produced comprising a temporary wafer and one or more tiles that are removably attached to the temporary wafer, preferably through a temporary adhesive layer. The tiles comprise a carrier portion and an active material portion. The active material portion is attached to the temporary carrier. The assembly further comprises a single continuous layer of the first material surrounding each of the one or more tiles. Then the back side of the carrier portions of the tiles and of the continuous layer of the first material are simultaneously planarized, and the planarized back sides of the tiles and of the continuous layer of the first material are bonded to a permanent carrier wafer, after which the temporary carrier wafer is removed. The method results in a hybrid wafer comprising a planar top layer formed of the material of the continuous layer with one or more islands embedded therein, the top layer of the islands being formed by the top layer of the active material portion of the one or more tiles.

Method of producing hybrid semiconductor wafer

A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

Method for forming a pixelated optoelectronic device on a substrate

An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.

Optical sensor and thin film photodiode

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Heverlee, Belgium

Yunlong Li