Samsung Electronics Co., Ltd.

Yunki Lee

Bumsuk Kim

Taehan Kim

Kyungho Lee

Kwanghee Lee

Eunsub Shim

Masato Fujita

Dongmin Keum

Sanghoon Kim

Kwanhee Lee

Jaeho Choi

Jonghoon Park

Changrok Moon

Bomi Kim

Boseong Kim

Seunghoon Kim

Junsung Park

Seokha Lee

Hyeyeon Park

Yongsick Kim

Hyeongdong Jo

Yoongi Joung

Yeaju Jang

Jeongmin Bae

Cheonho Park

Jungsaeng Kim

Kyungah Jeon

An image sensor includes: a substrate, having first and second surfaces opposing each other in a first direction, on which a plurality of unit pixels are arranged, the plurality of unit pixels including a normal pixel, an autofocusing pixel, and a compensation pixel in a direction, parallel to the first surface; a photodiode disposed in the substrate in each of the plurality of unit pixels; and a device isolation layer disposed between the plurality of unit pixels. The unit pixels include color filters, separated from each other by a grid, and microlenses disposed on the color filters. The compensation pixel is disposed on one side of the autofocusing pixel and includes a compensation microlens, smaller than a normal microlens included in the normal pixel, and a transparent color filter separated from adjacent color filters by a compensation grid smaller than a normal grid included in the normal pixel.

Image sensor

An image sensor includes a pixel array including a plurality of pixels arranged in directions, parallel to an upper surface of a substrate, each of the plurality of pixels including at least one photodiode, a color filter above the at least one photodiode, and a pixel circuit below the at least one photodiode, and a logic circuit configured to obtain a pixel signal from the plurality of pixels. The plurality of pixels include red pixels each having a red color filter, green pixels each having a green color filter, and blue pixels each having a blue color filter, and a size of a first red color filter included in a first red pixel, disposed in a first area separated by a first distance from a center of the pixel array, is greater than a size of a second red color filter included in a second red pixel, disposed in a second area separated from the center of the pixel array by a second distance, greater than the first distance.

Image sensor having different-sized color filters

An image sensor includes a pixel array in which a plurality of normal pixels and a plurality of autofocus (AF) pixels are disposed, and a logic circuit. The logic circuit provides an autofocus function using a phase difference between pixel signals obtained from each of the plurality of AF pixels. Each of the AF pixels includes a single AF lens disposed on a pair of pixel areas. An AF lens of the AF pixel spaced apart from a center of the pixel array may have an area larger than an area of the AF lens of the AF pixel adjacent to the center.

Image sensor with size-variable autofocus lenses

A pixel array including: a plurality of pixel groups, each pixel group including: a plurality of unit pixels respectively including photoelectric conversion elements disposed in a semiconductor substrate; trench structures disposed in the semiconductor substrate and extending in a vertical direction from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate to electrically and optically separate the photoelectric conversion elements from each other; and a microlens disposed above or below the semiconductor substrate, the microlens covering all of the photoelectric conversion elements in the plurality of unit pixels to focus an incident light to the photoelectric conversion elements.

Pixel array and an image sensor including the same

An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

Pixel array of image sensor and method of manufacturing the same

An image sensor including: a substrate which has a first surface and a second surface opposite to the first surface and pixels arranged in a two-dimensional array, wherein each of the pixels includes a photodiode; a multi-wiring layer arranged on the first surface of the substrate; a color filter layer arranged on the second surface of the substrate and including color filters that respectively correspond to the pixels; and a lens layer arranged on the color filter layer and including a double-sided spherical lens, wherein the double-sided spherical lens includes at least two material layers having different refractive indexes.

Image sensor including a double-sided spherical lens

An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the substrate between the photoelectric conversion parts, a first fixed charge film directly on the surface of the substrate, a second fixed charge film directly on the first fixed charge film and an inner wall of the pixel isolation trench, and an insulating layer directly on the second fixed charge film, the insulating layer configured to fill the pixel isolation trench.

Image sensor having first fixed charge film for anti-reflection and second fixed charge film for moisture protection

The inventive concept provides image sensors and methods of forming the same. In the image sensor, a surface trap region may be disposed to be adjacent to a surface of a substrate lens component. Thus, a dark current characteristic may be improved.

Image sensors and methods of forming the same

Growing community of inventors

Seoul, South Korea

Yunki Lee