Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Yunjung Lee

Heewon Lee

Chanha Kim

Kwangwoo Lee

Jinwoo Hong

Kangho Roh

Seungkyung Ro

Jinwook Lee

Jisoo Kim

Hee-Woong Kang

Suk-Eun Kang

Yangkook Sun

Sangjin Yoo

Juwon Lee

Jinbeom Park

Yosub Jeong

Heewoong Kang

Provided are a storage device and an operating method of a memory controller. The storage device includes a non-volatile memory that outputs data from selected memory cells based on read voltage information, the read voltage information including a start read voltage, an end read voltage, and a read command. Moreover, the storage device includes a memory controller that determines whether a search region defined by the start read voltage and the end read voltage is within a multi-peak region of a threshold voltage distribution corresponding to a first state of the selected memory cells, based on the search region being within the multi-peak region, change the search region, and based on the search region not being within to the multi-peak region, determine a new read voltage using the search region.

Storage device and operating method of memory controller

A memory controller may include: a weight management unit configured to store a weight based on a read disturb strength of each of the plurality of word lines of the plurality of memory blocks; a counter configured to increase a read count of a management group that includes a target word line, based on the weight of the target word line obtained from the weight management unit, the counter configured to increase the read count in response to the controller receiving a read request for the target word line from an external host device; and a verification operation determination unit configured to determine whether to perform or to not perform a word line verification operation based on a comparison of a reference interval count with the read count of the management group that includes the target word line.

Memory controllers, storage devices, and controlling methods of storage devices

Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

Operation method of controller configured to control nonvolatile memory device and operation method of storage device

A storage device includes a nonvolatile memory device and a memory controller allowing the nonvolatile memory device to perform a read operation on memory cells belonging to a selected page in a selected memory block. After the read operation, the memory controller allows the nonvolatile memory device to perform a first check read operation on memory cells of a first neighbor page while sequentially selecting sets of read voltages. After the first check read operation, the memory controller allows the nonvolatile memory device to perform a second check read operation on memory cells of a second neighbor page while sequentially selecting the sets of read voltages. In the second check read operation, the memory controller first selects a set of read voltages, which are used in the first check read operation in which error correction succeeds.

Storage device and operating method of storage device

A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

Nonvolatile memory device including a fast read page and a storage device including the same

A storage device includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.

Storage device that determines write area of read reclaim operation based on estimated read count of reclaim area and operating method of the storage device

A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

Storage device and operating method thereof

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

Storage device including nonvolatile memory device and operating method thereof

A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

A lithium-air battery is provided. The lithium-air battery includes a negative electrode including lithium, a positive electrode including catalyst particles for controlling whether to generate LiO2 as a discharge product and for controlling a generation amount of LiO2, the positive electrode using oxygen as a positive electrode active material, and an electrolyte and a separator which are disposed between the negative electrode and the positive electrode.

Growing community of inventors

Suwon-si, South Korea

Yunjung Lee