Samsung Electronics Co., Ltd.

Cj Cheiljedang Corporation

Yunjung Choi

Hyung Joon Kim

Inseak Hwang

Kivin Im

Dongbok Lee

Ji Yeon Lee

Jin Sook Chang

Byoung Hoon Yoon

Sun Hyoung Choi

Younsoo Kim

Se Hoon Oh

Hyun Won Bae

Hyo Jeong Byun

Yong Uk Shin

Jaewon Jang

Sang Min Park

Jun Ok Moon

Youn-Joung Cho

Hyang Choi

Hanjin Lim

Jin-Su Lee

Gyu-Hee Park

Han Hyoung Lee

Moo Young Jung

Song-Gi Ryu

Chin Moo Cho

Boram Lim

Seongyul Park

Jae Hyoung Choi

Kyung-Chang Lee

Provided are a microorganism for producing L-amino acid, having increased cytochrome C activity, and an L-amino acid production method using the microorganism.

Microorganism for producing L-amino acid having increased cytochrome C activity, and L-amino acid production method using same

The present disclosure relates to a microorganism having increased glycine productivity and a method for producing a fermented composition using the microorganism, and more specifically, to a microorganism of the genushaving increased glycine productivity due to the introduction of a mutation in HisG, a method for preparing a fermented composition comprising glycine and glutamic acid using the microorganism of the genusand the fermented composition.

Microorganism having increased glycine productivity and method for producing fermented composition using the same

The present disclosure relates to a novel promoter and a method for producing L-amino acids using the promoter, and more specifically, to a novel polynucleotide having promoter activity, a vector and a microorganism of the genuscomprising the polynucleotide, a method for producing L-amino acids using the microorganism, and a fermented composition.

Promoter and a method for producing L-amino acid using the same

The present disclosure relates to a novel promoter and a method for producing L-amino acids using the promoter, and more specifically, to a novel polynucleotide having promoter activity, a vector and a microorganism of the genuscomprising the polynucleotide, a method for producing L-amino acids and a fermented composition using the microorganism, and a fermented composition.

Semiconductor devices are provided including a plurality of nonlinear bit lines formed on a substrate including a plurality of active areas; a plurality of word lines that pass through the plurality of active areas; an integral spacer that covers two sidewalls of the plurality of nonlinear bit lines and defines a plurality of spaces that expose two adjacent ones of the plurality of active areas; two conductive patterns that respectively abut on the two adjacent active areas in one of the plurality of spaces that is selected; and a contact separating insulation layer that is formed between the two conductive patterns in the one selected space.

Semiconductor devices having nonlinear bitline structures

The present disclosure relates to a microorganism producing L-lysine, and a method for producing L-lysine using the same.

Microorganism of the genusproducing l-lysine and a method for producing l-lysine using the same

Semiconductor devices are provided including a plurality of nonlinear bit lines formed on a substrate including a plurality of active areas; a plurality of word lines that pass through the plurality of active areas; an integral spacer that covers two sidewalls of the plurality of nonlinear bit lines and defines a plurality of spaces that expose two adjacent ones of the plurality of active areas; two conductive patterns that respectively abut on the two-adjacent active areas in one of the plurality of spaces that is selected; and a contact separating insulation layer that is formed between the two conductive patterns in the one selected space.

The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.

Method for manufacturing a capacitor for semiconductor devices

A semiconductor device includes a lower electrode on a lower structure, a dielectric layer conformally covering a surface of the lower electrode, an upper electrode conformally covering a surface of the dielectric layer, and a barrier layer on the upper electrode. The barrier layer and the upper electrode define a space on a sidewall of the lower electrode.

Semiconductor device including capacitor and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Yunjung Choi