Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Yunje Cho

Jae-Sung Lee

Jong Beom Ra

Myungjun Lee

Yong-sup Park

Woo-hyun Nam

Gaurav Kumar

Yongjin Chang

Shashank Shrikant Agashe

Taehyoung Lee

Kwangrak Kim

Sathyanarayanan Kulasekaran

Soonyang Kwon

Chanwoo Park

Jangryul Park

Subong Shon

Yeny Yim

A scanning electron microscope (SEM) device includes: an electron beam source configured to emit an electron beam; a lens unit disposed between the electron beam source and a stage configured to seat an object including structures having a pattern is seated, and including a scanning coil, the scanning coil configured to generate an electromagnetic field to provide a lens, and an astigmatism adjuster; and a control unit. The control unit is configured to change a working distance between the lens unit and the object to obtain a plurality of original images, obtain a pattern image, in which the structures appear, and a plurality of kernel images, in which a distribution of the electron beam on the object appears, from the plurality of original images, and control the astigmatism adjuster to adjust the focus and the astigmatism of the lens unit using feature values extracted from the plurality of kernel images.

Scanning electron microscope device, semiconductor manufacturing device, and method of controlling semiconductor manufacturing device

The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.

Estimating heights of defects in a wafer by scaling a 3D model using an artificial neural network

A spectroscopic measuring apparatus and method are provided. The apparatus includes a first light source, object, microlens, and imaging lenses, an optical fiber, a spectrometer and a position controller. The object lens to allows light from the first light source to be incident on a stage configured to support a measurement object. The microlens is disposed between the object lens and the stage. The imaging lens images light reflected from the measurement object. The optical fiber has an input terminal disposed on a first image plane of the imaging lens. The spectrometer is disposed at an output terminal of the optical fiber. The position controller controls positions of the object lens, the microlens, and the optical fiber, and adjusts the position of the object lens so that a focus of the object lens is positioned at a virtual image position of a virtual image generated by the microlens.

Spectroscopic measuring apparatus and method, and method for fabricating semiconductor device using the measuring method

A method of reconstructing a tomography image and a tomography apparatus configured to reconstruct a tomography image are provided. Tomography data corresponding to a moving object is acquired by performing a tomography scan on the object, and a tomography image is reconstructed using prior images obtained based on the acquired tomography data.

Tomography apparatus and method of reconstructing tomography image

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Seoul, South Korea

Yunje Cho