Xerox Corporation

Other

National Research Council of Canada

Samsung Electronics Co., Ltd.

Agency for Science, Technology and Research

Yuning Li

Yiliang Wu

Beng S Ong

Ping Liu

Beng Ong

Paul Farrell Smith

Hualong Pan

Yu Qi

Hadi K Mahabadi

Ye Tao

Samarendra Pratap Singh

Prashant Sonar

Nan-Xing Hu

Naveen Chopra

Peter Michael Kazmaier

Qi Zhang

Jun Li

Jianfu Ding

Zhikuan Chen

Siew Lay Lim

Kok Haw Ong

Jianping Lu

Mui Siang Soh

Ging Meng Ng

Michael Day

Marie D'lorio

Salima Alem

Afshin Dadvand

Mark Bortolus

Jesse Quinn

Marie D'iorio

Yilang Wu

The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than &#x2212;4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.

3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b']difuran-2,6-dione dicyanide-based materials and uses thereof in organic electronic devices

A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Compound having indolocarbazole moiety and divalent linkage

There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials. 

P-type materials and organic electronic devices

A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R, R, R, R, Ra, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Organic thin-film transistors

A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Polymer having indolocarbazole moiety and divalent linkage

There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material.[----]&#x2003;&#x2003;(I)

Ambipolar polymeric semiconductor materials and organic electronic devices

A substituted indolocarbazole comprising at least one optionally substituted thienyl.

Substituted indolocarbazoles

Processes for producing carboxylic acid-stabilized silver nanoparticles are disclosed. A reaction mixture comprising a silver salt, a carboxylic acid, and a tertiary amine is heated to form carboxylic acid-stabilized silver nanoparticles.

Methods for producing carboxylic acid stabilized silver nanoparticles

The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member.

Metallization process for making fuser members

A process comprising: (a) preparing a reaction mixture comprising a silver salt, the reducing agent comprising a hydrazine compound, a thermally removable stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles, wherein the reaction mixture generates an acid; and (b) removing the acid to produce the silver-containing nanoparticles substantially free of acid.

Silver nanoparticle process

A polymer of the formula/structure wherein R represents alkyl, alkoxy, aryl, or heteroaryl; each Rand Ris independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; Rand Rare independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR' wherein R&#x2032; is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Functionalized heteroacenes

A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.

Thin film transistors comprising surface modified carbon nanotubes

Processes for producing silver nanoparticles are disclosed. A reaction mixture comprising a silver compound, a carboxylic acid, an amine compound, and an optional solvent is optionally heated. A hydrazine compound is then added and the mixture is further reacted to produce the silver nanoparticles.

Silver nanoparticles and process for producing same

A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Growing community of inventors

Mississauga, Canada

Yuning Li