Average Co-Inventor Count = 1.45
ph-index = 76
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Zeno Semiconductor, Inc. (225 from 225 patents)
2. Silicon Storage Technology, Inc. (11 from 620 patents)
3. Monolithic 3d Inc. (5 from 384 patents)
4. Other (3 from 832,448 patents)
5. Z End Semiconductor, Inc. (1 from 1 patent)
6. Zero Semiconductor, Inc. (1 from 1 patent)
7. Zeno Semiconducter, Inc. (1 from 1 patent)
247 patents:
1. 12439611 - Memory cell and memory array select transistor
2. 12426238 - Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
3. 12238916 - Asymmetric semiconductor memory device having electrically floating body transistor
4. 12185523 - Semiconductor memory device having an electrically floating body transistor
5. 12176024 - Memory device comprising an electrically floating body transistor
6. 12171093 - NAND string utilizing floating body memory cell
7. 12159669 - Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
8. 12156397 - Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor
9. 12148472 - Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
10. 12094526 - Memory device comprising electrically floating body transistor
11. 12080349 - Content addressable memory device having electrically floating body transistor
12. 12062392 - Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers
13. 12046675 - Memory device comprising an electrically floating body transistor and methods of using
14. 11985809 - Memory device having electrically floating body transistor
15. 11974425 - Memory cell comprising first and second transistors and methods of operating