Taiwan Semiconductor Manufacturing Comp. Ltd.

YungHao Wang

Szu-Ying Chen

Sen-Hong Syue

Cheng-Po Chau

Ya-Wen Chiu

Yi Che Chan

Chih Ping Liao

Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.

Growing community of inventors

Hsinchu, Taiwan

YungHao Wang