Samsung Display Co., Ltd.

Yungbin Chung

Bogeon Jeon

Eunjeong Cho

Yeoungkeol Woo

Wooseok Jeon

Taeyoung Ahn

Eunjin Kwak

Sangwook Lee

Joonyong Park

Hyuneok Shin

Dongmin Lee

Myounggeun Cha

Sanggun Choi

Sunghoon Yang

Hwa-su Lim

Seongkweon Heo

Samtae Jeong

Hwa-Su Lim

Myunghan Lee

Seungkyeng Cho

Chulhyun Baek

Injun Choi

SangWook Lee

Joonwoo Bae

A display apparatus includes a first insulating layer, a conductive pattern disposed directly on the first insulating layer, a cladding pattern disposed on side surfaces of the conductive pattern, and a second insulating layer on the conductive pattern and the cladding pattern, wherein the cladding pattern includes a first cladding layer including a first material and a second cladding layer including a second material different from the first material.

Display apparatus and method of manufacturing the same

A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiN), aluminum oxide (AlO), and zirconium oxide (ZrO), and having a density ranging from about 2 g/cmto about 6 g/cm.

A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The thin film transistor includes an active layer. A display element is electrically connected to the thin film transistor.

Display apparatus having a silicon nitride buffer layer and method of manufacturing the same

A display device may include at least one optical control unit including first refractive index layers, second refractive index layers, and an optical compensation layer. The second refractive index layers may be stacked in an alternating manner with the first refractive index layers and may have a refractive index different from that of the first refractive index layers. The optical compensation layer may be disposed at least on the uppermost refractive index layer of the first and second refractive index layers to be in contact with the uppermost refractive index layer or below the lowermost refractive index layer of the first and second refractive index layers to be in contact with the lowermost refractive index layer. The optical compensation layer may have a thickness less than those of the first and second refractive index layers.

Display device

A liquid crystal display (LCD) device capable of perventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

Liquid crystal display device and method for fabricating the same

A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.

Display device and manufacturing method thereof

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Yongin-si, South Korea

Yungbin Chung