United Microelectronics Corp.

Yung-Tsung Wei

Teng-Chun Tsai

Chia-Lin Hsu

Ming-Sheng Yang

Shao-Chung Hu

Hsueh-Chung Chen

Chien-Hsin Lai

Cheng-Yuan Tsai

Juen-Kuen Lin

Tzu-Shin Chen

A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation

Post-CMP removal of surface contaminants from silicon wafer

A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.

Chemical mechanical polishing method for copper

A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Carrier head for chemical mechanical polishing

The present invention provides a method for stabilizing low dielectric constant materials in a semiconductor structure. The method comprises providing the semiconductor structure and thereon spinning-on a dielectric layer. After a curing step, the dielectric layer is treated with an aqueous solution containing, for example, ammonium hydroxide. With the aqueous solution, a passivated film formed on the surface of the dielectric layer, such as a polymer layer, can protect the dielectric layer from adsorption of moisture or solvents.

Method for stabilizing low dielectric constant materials

A method for removing carbon-rich particles adhered on a copper surface, especially on a copper surface of a copper/low k dielectric dual damascene structure is provided. A barrier layer and a barrier-CMP stopping layer are formed between the copper layer and the low k dielectric layer of the dual damascene structure. After a Cu-CMP process and a barrier CMP process, a chemical buffing polishing process using an acidic aqueous solution under a downward force of about 0.5 to 3 psi is performed to remove carbon-rich particles adhered on the exposed copper surface, which is due to the low k dielectric layer having at least 90% carbon element being exposed and then polished during the Cu-CMP process and the barrier CMP process, resulting from a dishing phenomenon of the copper layer occurring during the two CMP processes. Alternately, a first chemical buffing polishing process is followed after the Cu-CMP process, and a second chemical buffing polishing process is followed after the barrier CMP process.

Method for removing carbon-rich particles adhered on a copper surface

A method of removing the micro-scratches on a metal layer is described, wherein the metal layer is formed on a barrier layer conformally onto a dielectric layer having a hole thereon, and wherein the metal layer over-fills the hole. The method comprises three chemical-mechanical polishing steps as described hereinbelow. The first chemical-mechanical polishing step is that oxidizing and polishing away the metal layer outside the hole, with a first slurry, wherein the first slurry has a chemical solution and has a plurality of abrasive particles. The second chemical-mechanical polishing step is that polishing away the barrier layer outside the hole, with a second slurry, whereby a plurality of micro-scratches are formed on the metal layer after the barrier layer is chemical-mechanically polished. The third chemical-mechanical polishing step is that buffing the metal layer, with the first slurry, thereby removing the micro-scratches on the metal layer.

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Tainan Hsien, Taiwan

Yung-Tsung Wei