Xintec Corporation

Yung-Tai Tsai

Tsang-Yu Liu

Shu-Ming Chang

Yen-Shih Ho

Chun-Wei Chang

Chien-Hui Chen

A manufacturing method of a semiconductor structure includes the following steps. A temporary bonding layer is used to adhere a carrier to a first surface of a wafer. A second surface of the wafer is adhered to an ultraviolet tape on a frame, and the temporary bonding layer and the carrier are removed. A protection tape is adhered to the first surface of the wafer. An ultraviolet light is used to irradiate the ultraviolet tape. A dicing tape is adhered to the protection tape and the frame, and the ultraviolet tape is removed. A first cutter is used to dice the wafer from the second surface of the wafer, such that plural chips and plural gaps between the chips are formed. A second cutter with a width smaller than the width of the first cutter is used to cut the protection tape along the gaps.

Manufacturing method of semiconductor structure with protein tape

A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.

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Taipei, Taiwan

Yung-Tai Tsai