Advanced Semiconductor Engineering, Inc.

Yung-Shun Chang

Teck-Chong Lee

Chien-Hua Chen

Mei-Ju Lu

Meng-Wei Hsieh

Pao-Nan Lee

Yi-Min Chin

Jia-Hao Zhang

Sheng-Wen Yang

Wen-Chi Hung

Chih-Pin Hung

Chih-Yi Huang

Yen-Liang Huang

A semiconductor package structure includes a semiconductor die and at least one pillar structure. The semiconductor die has an upper surface and includes at least one conductive pad disposed adjacent to the upper surface. The pillar structure is electrically connected to the conductive pad of the semiconductor die, and defines a recess portion recessed from a side surface of the pillar structure. A conductivity of the pillar structure is greater than a conductivity of the conductive pad.

Semiconductor package structure and method for manufacturing the same

A semiconductor package structure includes a circuit pattern structure, an encapsulant and an anchoring structure. The encapsulant is disposed on the circuit pattern structure. The anchoring structure is disposed adjacent to an interface between the encapsulant and the circuit pattern structure, and is configured to reduce a difference between a variation of expansion of the encapsulant and a variation of expansion of the circuit pattern structure in an environment of temperature variation.

Semiconductor package structure

A package structure is provided. The package structure includes an encapsulant and an interposer. The encapsulant has a top surface and a bottom surface opposite to the top surface. The interposer is encapsulated by the encapsulant. The interposer includes a main body, an interconnector, and a stop layer. The main body has a first surface and a second surface opposite to the first surface. The interconnector is disposed on the first surface and exposed from the top surface of the encapsulant. The stop layer is on the second surface, wherein a bottom surface of the stop layer is lower than the second surface.

Package structure with interposer encapsulated by an encapsulant

An assembly structure and a method for manufacturing an assembly structure are provided. The assembly structure includes a wiring structure and a semiconductor element. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the at least one dielectric layer, and defines an accommodating recess recessed from a top surface of the wiring structure. The wiring structure has a smooth surface extending from the top surface of the wiring structure to a surface of the accommodating recess. The semiconductor element is disposed in the accommodating recess.

Assembly structure and method for manufacturing the same

A semiconductor device package includes a first dielectric layer, a conductive pad and an electrical contact. The first dielectric layer has a first surface and a second surface opposite to the first surface. The conductive pad is disposed within the first dielectric layer. The conductive pad includes a first conductive layer and a barrier. The first conductive layer is adjacent to the second surface of the first dielectric layer. The first conductive layer has a first surface facing the first surface of the first dielectric layer and a second surface opposite to the first surface. The second surface of the first conductive layer is exposed from the first dielectric layer. The barrier layer is disposed on the first surface of the first conductive layer. The electrical contact is disposed on the second surface of the first conductive layer of the conductive pad.

Semiconductor device package and method of manufacturing the same

A semiconductor package device includes a transparent carrier, a first patterned conductive layer, a second patterned conductive layer, and a first insulation layer. The transparent carrier has a first surface, a second surface opposite to the first surface and a third surface extended between the first surface and the second surface. The first patterned conductive layer is disposed on the first surface of the transparent carrier. The first patterned conductive layer has a first surface coplanar with the third surface of the transparent carrier. The second patterned conductive layer is disposed on the first surface of the transparent carrier and electrically isolated from the first patterned conductive layer. The first insulation layer is disposed on the transparent carrier and covers the first patterned conductive layer.

Semiconductor package device and method of manufacturing the same

A semiconductor device package includes a first semiconductor device; a second semiconductor device; and a first redistribution layer disposed on the first semiconductor device and having a side wall defining an opening that exposes the first semiconductor device. The side wall of the first redistribution layer has an average surface roughness (Ra) in a range up to 2 micrometers (&#x3bc;m).

Semiconductor device package and method for packaging the same

A package structure includes a wiring structure, at least one electronic device, a reinforcement structure, a plurality of conductive vias and an encapsulant. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The electronic device is electrically connected to the wiring structure. The reinforcement structure is disposed on a surface of the wiring structure, and includes a thermoset material. The conductive vias is disposed in the reinforcement structure. The encapsulant covers the electronic device.

Package structure and method for manufacturing the same

An integrated passive component comprises a capacitor, a first passivation layer, an inductor, an insulation layer and an external contact. The first passivation layer surrounds the capacitor. The inductor is on the first passivation layer and electrically connected to the capacitor. The inductor comprises a plurality of conductive pillars. The insulation layer is on the first passivation layer and surrounds each of the conductive pillars. The insulation layer comprises a first surface adjacent to the first passivation layer, a second surface opposite to the first surface, and a side surface extending between the first surface and the second surface. A ratio of a width of each of the conductive pillars to a height of each of the conductive pillars is about 1:7. The external contact is electrically connected to the inductor and contacts the second surface of the insulation layer and the side surface of the insulation layer.

Integrated passive component and method for manufacturing the same

A semiconductor device package includes: (1) a substrate having a first surface; (2) a waveguide disposed in the substrate; and (3) an optical device including: (a) a first portion extending into the substrate and not extending beyond the first surface of the substrate, and (b) a second portion extending along the first surface of the substrate, wherein the second portion of the optical device comprises a protrusion and the substrate defines a groove extending from the first surface of the substrate, and wherein the protrusion of the second portion of the optical device engages with the groove of the substrate.

Semiconductor device packages

A semiconductor device package includes a substrate and an optical device. The optical device includes a first portion extending into the substrate and not extending beyond a first surface of the substrate. The optical device further includes a second portion extending along the first surface of the substrate.

A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.

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Kaohsiung, Taiwan

Yung-Shun Chang