Hyundai Electronics Industries Co. Ltd.

Yung M Koo

Woo Bong Lee

Tae Jung Yeo

Jae Wan Ko

Se Jun Oh

Hae Sung Park

Sung Kee Park

Chung G Choi

Sea C Kim

Sang I Kim

Young I Kim

Jai O Koh

Il S Hyun

Ho G Ryoo

An electrostatic discharge (ESD) protecting transistor and a method for fabricating the same, capable of consuming a high voltage or overcurrent applied to a semiconductor circuit device and thereby protecting the circuit device from the high voltage or overcurrent. The ESD protecting transistor is of an asymmetric charge coupled MOS transistor structure having a highly doped buried layer capable of dispersing a current flux, thereby removing an instant ESD impact and reducing generation of heat caused by a concentration of high current flux. Accordingly, an effect of improving the resistance characteristic to the ESD impact is provided.

Electrostatic discharge protecting transistor

Method for fabricating electrostatic discharge protecting transistor

A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.

Method for curing spin-on-glass film by utilizing ultraviolet irradiation

Growing community of inventors

Seoul, South Korea

Yung M Koo