Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung-Lung Yang

Yen-Jou Wu

Keng-Ying Liao

Chi-Chung Jen

Yu-Chu Lin

Po-Zen Chen

Huai-jen Tung

Chih Wei Sung

Chih-Wei Sung

Tzu-Pin Lin

Yu-Chien Ku

Huai-Jen Tung

Po-zen Chen

Tsun-kai Tsao

Ken-Ying Liao

A semiconductor device includes a memory region including an array of memory cell devices, and a test region including a test memory cell structure. The test memory cell structure includes a first gate stack on a first raised portion of a substrate, a first polysilicon structure adjacent to the first raised portion and in a region between the first raised portion and a second raised portion of the substrate, a first spacer adjacent to the first polysilicon structure, and a second gate stack on the second raised portion, a second polysilicon structure adjacent to the second raised portion and in the region between the first raised portion and the second raised portion, and a second spacer adjacent to the second polysilicon structure. The semiconductor device includes an interlayer dielectric layer over at least a portion of the memory region and at least a portion of the test region.

Test structure for void and topography monitoring in a flash memory device

A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.

Methods for forming image sensor devices

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Hsinchu, Taiwan

Yung-Lung Yang