Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung-Lin Hsu

Chun-Jung Huang

Kuang Huan Hsu

Steven Huang

Jeff Chen

Yueh-Lun Yang

Li-Hsin Chu

Po-Feng Tsai

Jen-Ti Wang

Kuang-Huan Hsu

Henry Peng

Tsung Wei Chen

Chih-Hung Liu

Fu-Hsien Li

Shih-Hung Chien

Hsu-Shui Liu

Wei-Chih Chen

Han-Wen Liao

Alan Yang

Chiung-Min Lin

Yu-Yao Huang

Richard Lin

Hsiao-Wei Chen

In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Modular pressurized workstation

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Method for an ion implantation process employing an ion-collecting device that collects a distribution of ejected ions from a target to correct a tilt angle of the target

A planarization method includes forming a dielectric layer over a polish stop layer. The dielectric layer is polished until reaching the polish stop layer, and the polished dielectric layer has a concave top surface. A compensation layer is formed over the concave top surface. The compensation layer is polished.

Semiconductor structure and planarization method thereof

Method for ion implantation that adjusts a targets tilt angle based on a distribution of ejected ions from a target

The present disclosure describes a system and a method for a ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Method for ion implantation that adjusts a target's tilt angle based on a distribution of ejected ions from a target

A fault detection method in a semiconductor fabricating factory is provided. The method includes delivering a test vehicle along a rail to a test region. The method further includes projecting a test signal from a transducer that is positioned on the test vehicle over a check board when the test vehicle is located within the test region. The check board and the test vehicle are arranged along an axis that is parallel to the rail. The method also includes performing an analysis of the test signal projected over the check board. In addition, the method includes issuing a warning alarm when an abnormality is detected based on the analysis result.

Fault detection method in semiconductor fabrication

A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle, a supporting structure, and a first sensor. The wheeled trolley is above a rail of the rail system, is operable to move over the rail, and has a bottom surface. The overhead vehicle body is suspended by the wheeled trolley and below the rail. The supporting structure connects the wheeled trolley and the overhead vehicle body. The first sensor is on the bottom surface of the wheeled trolley and is configured to detect a first parameter of the rail of the rail system.

Monitor vehicle for a rail system and method thereof

In an embodiment an automated material handling system (AMHS) for a semiconductor fabrication facility (FAB) includes: a sensor supported by a rail, wherein the sensor is configured to collect sensor data characterizing a vehicle that moves along the rail, wherein the vehicle is configured to carry at least one wafer; and a monitoring module configured to: detect a trigger event based on the sensor data, and initiate a remediation action in response to the trigger event.

Systems and methods for sensory automated material handing

A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle body, at least one supporting structure, and at least one first sensor. The wheeled trolley is operable to move over one or more rails of the rail system. The supporting structure connects the wheeled trolley and overhead vehicle body. The first sensor is on the wheeled trolley and configured to detect at least one first parameter of the one or more rails of the rail system.

Disclosed is a method and a system for monitoring of environment and security in a fabrication facility. In one embodiment, a method comprising: transporting an automated material handling system (AMHS) vehicle from a first position to a second position; and detecting at least one parameter using at least one sensor located on the AMHS vehicle to determine at least one environmental or security condition between the first and second positions.

Growing community of inventors

Hsinchu, Taiwan

Yung-Lin Hsu