Mcdonnell Douglas Corporation

Gte Laboratories Incorporated

Yung J Chen

William H McNeill

Rick K Hodgman

Eden Y Mei

High density, simplified fabrication and the elimination of sidewalk leakage effects are achieved by the implementation of a self-aligned ion-implantation step during the fabrication of the MNOS transistor wherein, after the formation of the gate electrode of the transistor, low energy ions are implanted within the nitride layer of the MNOS transistor in the regions of the nitride layer adjacent to the gate electrode.

High density MNOS transistor with ion implant into nitride layer

An electrooptic device for controlling the intensity of a monochromatic light beam comprises a first transparent element such as a triangular prism or hemicylindrical prism having a planar surface. A thin layer of a material such as a metal is in contact with the planar surface of the transparent element and a semiconductor material is adjacent to the metal layer. A voltage source provides a potential difference between the metal layer and the semiconductor material to alter the charge density in the semiconductor material to affect the degree of coupling between the light beam entering the device and surface plasmon waves generated within the device to correspondingly control the intensity of the light beam exiting the device.

High frequency light modulation device

A sensing system for a nonvolatile memory transistor array employs reference transistors which are substantially identical to the memory transistors within the array and employs means to program the threshold voltage levels of the reference transistors to a lower level than that of the memory transistors within the array such that the changes in the electrical characteristics of both the memory and the reference transistors are proportional over time, the system thereby being rendered self-tracking.

Nonvolatile memory sensing system

An electrooptic device for controlling the intensity of a monochromatic light beam comprises a transparent element having opposed planar surfaces operable to reflect a collimated light beam alternately from the two surfaces. A plurality of semiconductor structures contact one surface of the device at regions where the collimated light beam reflects from that surface. Each semiconductor structure includes a thin layer of a material such as a metal in contact with the planar surface of the transparent element and a semiconductor material adjacent to the metal layer. A voltage source provides a potential between the metal layer and the semiconductor material of each structure to separately alter the charge density in the semiconductor material of each structure to affect the degree of coupling between the light beam entering the device and surface plasmon waves generated within each structure. The device is operable as a signal mixer or an optical logic switching device.

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Weston, MA, United States of America

Yung J Chen