Advanced Semiconductor Engineering, Inc.

Yung I Yeh

Ming-Hung Chen

Chang-Lin Yeh

Sheng-Yu Chen

Hsu-Nan Fang

Kun-Ching Chen

Chun-Jun Zhuang

Ming-Chiang Lee

Yi Chuan Ding

Shu Jung Ma

Te Tsung Chao

Hui Chin Fang

Chun-Chin Huang

Ya Ping Hung

Che-Ming Hsu

Kun Ching Chen

Shiun Jaw Hsien

A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

Semiconductor device package and method of manufacturing the same

A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

A semiconductor package includes a semiconductor die, a plurality of conductive bumps, a shielding layer, an encapsulant and a redistribution layer. The semiconductor die has an active surface, a backside surface and a lateral surface. The conductive bumps are disposed on the active surface of the semiconductor die. The shielding layer is disposed on the lateral surface of the semiconductor die. The encapsulant covers the shielding layer, and has a first surface and a second surface opposite to the first surface. The redistribution layer is disposed on the first surface of the encapsulant and electrically connected to the semiconductor die through the conductive bumps. The shielding layer is electrically connected to the redistribution layer.

Semiconductor package and method for manufacturing the same

A semiconductor device package includes a first redistribution layer (RDL), a first die, a second die, a second RDL and an encapsulant. The first die is disposed on the first RDL and is electrically connected to the first RDL. The first die has a first electrical contact. The second die is disposed on the first RDL and is electrically connected to the first RDL. The second die has a first electrical contact. The second RDL is surrounded by the first RDL. The second RDL has a first electrical contact electrically connected to the first electrical contact of the first die and a second electrical contact electrically connected to the first electrical contact of the second die. A size of the first electrical contact of the second RDL is greater than a size of the second electrical contact of the second RDL.

A semiconductor device package ready for assembly includes: a semiconductor substrate; a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate; a first conductive pillar disposed on the first UBM layer; and a second conductive pillar disposed on the first conductive pillar. A material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant.

Semiconductor device package and method for forming the same

A lead-bond type chip package includes a multilayer substrate for supporting and electrical interconnecting a semiconductor chip. The multilayer substrate has a slot defined therein. The multilayer substrate comprises an interlayer circuit board having prepregs disposed thereon, a plurality of leads on the prepreg on the upper surface of the interlayer circuit board, and a plurality of solder pads for making external electrical connection on the prepreg on the lower surface of the interlayer circuit board. The leads of the multilayer substrate are bonded to corresponding bonding pads formed on the semiconductor chip. A package body is formed on the multilayer substrate around the semiconductor chip and in the slot of the multilayer substrate. The multilayer substrate is capable of providing a power or ground plane formed therein for enhancing the electrical performance of the package, and providing a high wiring density for packaging a chip with high I/O connections. This invention also provides a method of producing a multilayer substrate for use in forming a lead-bond type chip package

Lead-bond type chip package and manufacturing method thereof

A lead-bond type chip package includes a multilayer substrate for supporting and electrical interconnecting a semiconductor chip. The multilayer substrate has a slot defined therein. The multilayer substrate comprises an interlayer circuit board having prepregs disposed thereon, a plurality of leads on the prepreg on the upper surface of the interlayer circuit board, and a plurality of solder pads for making external electrical connection on the prepreg on the lower surface of the interlayer circuit board. The leads of the multilayer substrate are bonded to corresponding bonding pads formed on the semiconductor chip. A package body is formed on the multilayer substrate around the semiconductor chip and in the slot of the multilayer substrate. The multilayer substrate is capable of providing a power or ground plane formed therein for enhancing the electrical performance of the package, and providing a high wiring density for packaging a chip with high I/O connections. This invention also provides a method of producing a multilayer substrate for use in forming a lead-bond type chip package.

A substrate strip includes a plurality of substrate units wherein each of the substrate units is accepted for packaging a semiconductor package. The substrate strip comprises: a frame having at least one opening; at least one first substrate unit integrally formed with the strip frame; and at least one second substrate unit disposed in the opening and securely attached to the strip frame by an adhesive. The present invention further provides a method for making the substrate strip. The method is conducted by separating defected substrate units from a substrate strip and securely attaching accepted substrate units back to the substrate strip.

Substrate strip and manufacturing method thereof

A BGA semiconductor package comprises a chip mounted on the central region of the upper surface on the substrate. The substrate includes an upper surface, a lower surface, a ground plate disposed under the upper surface, and at least one power plate disposed between the ground plate and the lower surface. A ground ring surrounds the periphery of the chip and possesses a first set of serrated portions extending toward the outer edge of the substrate. A first power ring surrounds the ground ring and possesses a second set of serrated portions extending among the first set of serrated portions of the ground ring, such that the extending portions of the first and second sets of serrated rings interlace coincidentally with each other and the wire bonding distances from the bonding pads of chip surface to the extending portions of the first and the second serrated rings are comparable. According to another aspect of the present invention, a plurality of power vias are dispersedly distributed in the power ring to electrically connect the power ring to the power plate, wherein at least two power vias are coupled together. The coupled power vias can reduce the damage to the wholeness of ground plate thus enables the best electrical performance of the ground plate.

Ball grid array semiconductor package and substrate therefor

A BGA package includes a chip with an array pad design disposed on the upper surface of a substrate. The chip has a plurality of bonding pads located about the periphery thereof, and the bonding pads of the chip are positioned in three rows, an inner row, a middle row, and an outer row along the sides of the chip. Only power supply pads and ground pads are designed to be located in the outer row of bonding pads, and all of the I/O pads are designed to be located in the middle row of the bonding pads and the inner row of the bonding pads. The outer row, middle row, and the inner row of the bonding pads are electrically connected to the substrate through three tiers of bonding wires with different loop height, respectively,

Growing community of inventors

Kaohsiung, Taiwan

Yung I Yeh